Paper Review Records
全部论文审稿周期
25 篇有效样本 · 按发表日期由新到旧排列
审稿天数=录用日期-收稿日期；保留 PDF/DOI/网页源链接
441
天
Single OTRA based multifunction inverse filter
作者
Subhasish Banerjee; Pulak Mondal; Mourina Ghosh; Rajeev Kumar Ranjan展开收起
作者单位
1. Department of Electronics & Communication Engineering, MCKV Institute of Engineering, Liluah, Howrah , India; 2. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, India; 3. Department of Electronics & Communication Engineering, Indian Institute of Information Technology, Guwahati, India; 4. Department of Electronics Engineering, Indian Institute of Technology (Indian School of Mines), Dhanbad, India展开收起
482
天
Comparative analysis of noise effects on triple, double, and single material gate step FinFET
作者
Rinku Rani Das; Atanu Chowdhury; Apurba Chakraborty展开收起
作者单位
1. School of Computing, Amrita Vishwa Vidyapeetham, Amritapuri, Kollam, India; 2. Department of Electronics and Communication Engineering, National Institute of Technology Agartala, Tripura, India; 3. Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani, Goa, India展开收起
164
天
Electron radiation-induced device degradation in commercial SiC Power MOSFETs
作者
Tamana Baba; Fatihah Assyira bt Mohd Bakri; Abdullah Üzüm; Mehmet Turhal; Norazlina Saidin; Nurul Fadzlin Hasbullah展开收起
作者单位
1. Department of Electrical and Computer Engineering, Kulliyyah of Engineering, International Islamic University Malaysia, Kuala Lumpur, Malaysia; 2. Department of Electrical and Electronics Engineering, Faculty of Engineering, Karadeniz Technical University, Trabzon, Türkiye展开收起
72
天
The role of asymmetry in elevating nanosheet FET: RF and circuit metrics
作者
Raj Saha; Anubhab Saha; Akash Mandal; Tridib Kar; Subir Kumar Maity; Udai P. Singh; Rajendra Prasad展开收起
作者单位
1. School of Electronics Engineering, Kalinga Institute of Industrial Technology (KIIT) Deemed to be University, Bhubaneswar, India展开收起
88
天
Unveiling the impact of ITCs on High-k SOI GaN FinFET and its sensitivity analysis for improved reliability: a simulation study
作者
Vandana Singh Rajawat; Bharat Choudhary; Ajay Kumar展开收起
作者单位
1. Department of Electronics & Communication Engineering, Malaviya National Institute of Technology, Jaipur, India; 2. Department of Electronics & Communication Engineering, Jaypee Institute of Information Technology, Noida, India展开收起
594
天
A 4.9 GS/s strongarm latch comparator topology with offset correction in 32-nm
作者
Chokkakula Ganesh; A. Murali; B. Vamsy Krishna; T. Ananda Babu; Girraj Sharma; Asisa Kumar Panigrahy; M. Durga Prakash展开收起
作者单位
1. Deptartment of Electronics and Communication Engineering, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, India; 2. Deptartment of Electronics and Communication Engineering, QIS College of Engineering and Technology, Ongole, Vengamukkapalem, India; 3. Department of Electronics and Communication Engineering, Seshadri Rao Gudlavalleru Engineering College, Andhra Pradesh, India; 4. Jindal Institute of Behavioural Sciences O.P. Jindal Global University, Sonipat, India; 5. Dept. of Electronics and Communication Engineering, Faculty of Science and Technology (IcfaiTech), ICFAI Foundation for Higher Education Hyderabad, Hyderabad, India; 6. Department of ECE, School of Engineering and Science, SRM University-AP, Mangalagiri, Andhra Pradesh, India展开收起
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样本口径2026 年最近 5 篇有效论文样本
平均审稿62 天
中位数65 天