Physics & Astrophysics
Paper Review Records
All Paper Review Records
15 valid samples · Newest publication first
Review days = acceptance date − received date. PDF, DOI, and publisher-page sources are retained.
An integrated thulium-doped thin-film lithium niobate microring laser
AuthorsKaifan Zhao; Zhiwei Fang; Luyao Li; Qiyue Hu; Huiting Song; Qinfen Huang; Renhong Gao; Yang Tan; Ya Cheng
Affiliations1. The Extreme Optoelectromechanics Laboratory (XXL), School of Physics, East China Normal University 1 , Shanghai 200241,; 2. School of Physics, Shandong University 2 , Jinan, Shandong 250100,; 3. Hefei National Laboratory 3 , Hefei 230088,
Zr-related states in AlN probed by photocurrent excitation spectroscopy
AuthorsF. A. Rafi; H. Alwan; J. Li; J. Y. Lin; H. X. Jiang
Affiliations1. Department of Electrical and Computer Engineering, Texas Tech University , Lubbock, Texas 79409,
Diameter-tuned emission from InGaN/GaN nanowire arrays
AuthorsQi Chen; Bo Shi; Meng Liang; Junjie Kang; Junxi Wang; Tailiang Guo; Jinmin Li; Chaoxing Wu; Zhiqiang Liu
Affiliations1. Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,; 2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 2 , Beijing 100049,; 3. College of Physics and Information Engineering, Fuzhou University 3 , Fujian 350108,; 4. Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China 4 , Fujian 350108,
Vapor-phase HMDS passivation improves performance and ambient stability of niobium superconducting resonators
AuthorsMoeid Jamalzadeh; Miguel Manzo-Perez; Man Nguyen; Christopher Nadeau; Sooyeon Hwang; Jiwon Park; Iliya Shiravand; Kim Kisslinger; Xiao Tong; Matthew LaHaye; Zhujun Huang; Davood Shahrjerdi
Affiliations1. Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,; 2. Booz Allen Hamilton 2 , Rome, New York 13441,; 3. Center for Functional Nanomaterials, Brookhaven National Laboratory 3 , Upton, New York 11973,; 4. Air Force Research Laboratory, Information Directorate 4 , Rome, New York 13441,
Radiation effects of heavy ions in hydrogen-terminated diamond field-effect transistors
AuthorsYang Liu; Xing Li; Si-Lei Zhong; Weili Fu; Xiao-Ning Zhang; Zhi-Feng Lei; Chao Peng; Hong Zhang; Zhan-Gang Zhang; Teng Ma; Jia-Yue Yang
Affiliations1. School of Nuclear Science, Energy and Power Engineering, Shandong University 1 , Jinan 250100,; 2. China Electronic Product Reliability and Environmental Testing Research Institute 2 , Guangzhou 510610,; 3. The Department of Information Engineering, University of Padova 3 , 35131 Padua,; 4. Institute of Frontier and Interdisciplinary Science, Shandong University 4 , Qingdao 266237,; 5. State Key Laboratory of Chips and Systems for Advanced Light Field Display, School of Shandong University-Hisense Optoelectronic Research Institute 5 , Qingdao 266237,
Non-blocking grain boundaries for Li-ion transport in Li3YCl6 halide electrolyte
AuthorsLixin Xiong; Boyi Zhang; Wenwei Luo; Longbing Shang; Bo Xu; Chuying Ouyang; Musheng Wu
Affiliations1. Laboratory of Computational Materials Physics, School of Physics, Jiangxi Normal University , Nanchang 330022,
Unveiling the hidden effects of local potential energy surface on ion transport in superionic conductors
AuthorsBowei Pu; Zheyi Zou; Bing He; Yuan Ren; Xiaoliang Liu; Siqi Shi
Affiliations1. State Key Laboratory of Materials for Advanced Nuclear Energy & School of Materials Science and Engineering, Shanghai University 1 , Shanghai 200444,; 2. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University 2 , Xiangtan 411105,; 3. State Key Laboratory of Materials for Advanced Nuclear Energy & School of Computer Engineering and Science, Shanghai University 3 , Shanghai 200444,; 4. School of Mechanical Engineering, Inner Mongolia University of Science & Technology 4 , Baotou 014010,; 5. Materials Genome Institute, Shanghai University 5 , Shanghai 200444,
Enhanced threshold-voltage stability via local strain mitigation in GaN HEMTs with a crystalline SiN/AlN cap
AuthorsXin Luo; Peng Cui; Guodong Wang; Lan Mu; Tieying Zhang; Liu Wang; Kaifa Qi; Yu Zhong; Handoko Linewih; Zhaojun Lin; Xiangang Xu; Jisheng Han
Affiliations1. Institute of Novel Semiconductors, Shandong University , Jinan 250100,
Multidimensional control of optical filamentation via sub-cycle delay modulation of two femtosecond pulses
AuthorsDongwei Li; Boyu Ji; Jinshuai Wu; Tingting Xi; Wenliang Li; Jingquan Lin; Lanzhi Zhang; Yangjian Cai; Zuoqiang Hao
Affiliations1. Shandong Provincial Key Laboratory of Light Field Manipulation Physics and Applications, School of Physics and Optoelectronics, Shandong Normal University 1 , Jinan 250358,; 2. Xinjiang Institute of Engineering 2 , Urumqi 830023,; 3. School of Physics, Changchun University of Science and Technology 3 , Changchun 130022,; 4. School of Physical Sciences, University of Chinese Academy of Sciences 4 , Beijing 100049,
Defect-induced self-trapping and stabilization of excitons by strong electron–phonon coupling in vacancy-ordered perovskite Cs2SnCl6
AuthorsChaojie Hu; Yinglin Guan; Junjie Zhou; Wenbo Xiao; Le Huang
Affiliations1. Key Laboratory for Optoelectronic Information Perception and Instrumentation of Jiangxi Province, Nanchang Hangkong University 1 , Nanchang 330063,; 2. School of Physics and Optoelectronic Engineering, Guangdong University of Technology 2 , Guangzhou 510006,; 3. Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology 3 , Guangzhou 510006,
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