CrushSCI.com
Journal Selection & Manuscript Polishing Services
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 临时占位封面 Engineering
Back to journal directory

Review Cycle Records

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IOP SCIE Non-OA
2026 Emerging Zone 42025 CAS Zone 42025 JCR Q3
99.2Average days
89.5Median days
46Fastest days
175Longest days
1792025 publications

Paper Review Records

All Paper Review Records

10 valid samples · Newest publication first
Review days = acceptance date − received date. PDF, DOI, and publisher-page sources are retained.

46 days

Synergistic enhancement of threshold voltage in AlGaN/GaN HEMTs using ferroelectric HfO 2 /ZrO 2 gate dielectric and partial barrier recess

AuthorsXinghuan Li; Zijing Xie; Xiaoyi Liu; Xiao Ma; Hong Wang

Affiliations1. South China University of Technology

Source PDF DOI Publisher page
72 days

Degradation mechanism of static and capacitance characteristics of 700 V p-GaN gate HEMT under repetitive unclamped inductive switching stress

AuthorsTeng Liu; Linna Zhao; Chenghao Li; Ruijie Zhao; Xiaofeng Gu; Chenkai Zhu; Zhuo Yang; Qian Yang; Zongqing Li

Affiliations1. Jiangnan University; 2. Jiangsu Provincial Key Laboratory of MEMS Sensors and ASIC Manufacturing Technology; 3. Wuxi NCE Power Company, Ltd

Source PDF DOI Publisher page
147 days

A fast extraction method of negative bias temperature instability (NBTI) generated permanent defects activation energy using temperature step stress

AuthorsRui Gao; Zixuan Wang; Zhigang Li; Chao Li; Yujuan He; Xiaowen Zhang; Xiaoling Lin; Liwei Wang; Yiqiang Chen; Guoguang Lu

Affiliations1. National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component; 2. School of Integrated Circuits; 3. School of Electronic Engineering and Automation

Source PDF DOI Publisher page
84 days

Thermal noise model of nanoscale fully-depleted silicon-on-insulator MOSFETs

AuthorsTianxiang Yue; Qun Wei; Wenpeng Zhang; Xiaofei Jia

Affiliations1. Xidian University; 2. Ankang University

Source PDF DOI Publisher page
64 days

Paper-based multi-gate EDL transistors with differentiated bottom and lateral gate coupling for multi-input neuromorphic integration

AuthorsDantong Wang; Xiaolong Zeng; Yurong Liu; Rongsheng Chen; Kuiwei Geng

Affiliations1. School of Microelectronics, South China University of Technology

Source PDF DOI Publisher page
90 days

Self-compensation by silicon DX centers in ultrawide-bandgap nitrides

AuthorsJohn L Lyons; Darshana Wickramaratne

Affiliations1. US Naval Research Laboratory

Source PDF DOI Publisher page
175 days

Improving Robustness and Variability Tolerance in SRAM-Based In-Memory Computing Using Body Bias

AuthorsNeha Gupta; Lomash Chandra Acharya; Khoirom Johnson Singh; Mahipal Dargupally; Abhishek Acharya; S. Dasgupta; Anand Bulusu

Affiliations1. Indian Institute of Technology Roorkee; 2. Dhanamanjuri University; 3. Sardar Vallabhbhai National Institute of Technology; 4. IIT Roorkee

Source PDF DOI Publisher page
89 days

Leakage Current Suppression in RB-IGCTs through Proton Irradiation: Mechanism and Strategy Design

AuthorsSu Yan; chunpin ren; zhitao huang; xiaozhao li; jiapeng liu; xiaoyuan liu; xingchen wang; xiaoguang wei; Bin Gao; jinpeng wu; rong zeng

Affiliations1. Huairou Laboratory; 2. Tsinghua University

Source PDF DOI Publisher page
100 days

Impact of CMP surface quality and pre-epitaxial H 2 treatment on the surface defect mitigation and electrical characteristics of 6.5 kV SiC MOSFET

AuthorsChi-Hsiang Hsieh; Chiao-Yang Cheng; Yi-Kai Hsiao; Tzu-Yi Lee; Yi-Chang Wu; Yan-Kuin Su; Chao-Chang A Chen; Po-Tsung Lee; Hao-Chung Kuo

Affiliations1. Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University; 2. Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University; 3. Semiconductor Research Center, Hon Hai Research Institute; 4. GeChi Compound Semiconductor Co. Ltd; 5. National Taiwan University of Science and Technology; 6. Chung Yuan Christian University

Source PDF DOI Publisher page
125 days

High-speed, self-powered and polarization-sensitive photodetector based on FePSe 3 /ReS 2 heterojunction

AuthorsYanliang Zhu; Yunfei Wang; Xingyu Zhou; Keyu Qian; Yujin He; Yike Li; Haiyan Nan; Shaoqing Xiao; Zhengjin Weng

Affiliations1. Jiangnan University

Source PDF DOI Publisher page

Expert Matching · Case Demo

Turn Your Submission Goalsinto a Verifiable Journal Plan

Share your field, deadline, and author profile. CrushSCI uses real review records to suggest a title direction, shortlist journals, and estimate timelines.

CrushSCI online

Client

I work in environmental engineering and need an SCI paper published within three months. I have no grant funding or prominent co-author. Which journals could I target?

CrushSCI

Yes. We will first screen for feasibility against the 90-day deadline, then identify comparable papers without grant support or prominent co-authors. The final shortlist will prioritize research quality and journal scope.

Suggested title
Machine Learning and Life-Cycle Assessment for Predicting and Optimizing Carbon Emissions in Urban Wastewater Treatment

SampleLatest 5 valid paper samples from 2026

Average review96.4 days

Median77 days

Contact CrushSCI

Contact CrushSCI

Leave your contact details so we can discuss your manuscript, editing needs, and submission plan.

Selected service: Paper Editing Service

Or leave your contact details

WhatsApp, Telegram, WeChat, and email are all optional, but at least one is required. Once received, we will contact you as soon as possible.