Paper Review Records
All Paper Review Records
10 valid samples · Newest publication first
Review days = acceptance date − received date. PDF, DOI, and publisher-page sources are retained.
Synergistic enhancement of threshold voltage in AlGaN/GaN HEMTs using ferroelectric HfO 2 /ZrO 2 gate dielectric and partial barrier recess
AuthorsXinghuan Li; Zijing Xie; Xiaoyi Liu; Xiao Ma; Hong Wang
Affiliations1. South China University of Technology
Degradation mechanism of static and capacitance characteristics of 700 V p-GaN gate HEMT under repetitive unclamped inductive switching stress
AuthorsTeng Liu; Linna Zhao; Chenghao Li; Ruijie Zhao; Xiaofeng Gu; Chenkai Zhu; Zhuo Yang; Qian Yang; Zongqing Li
Affiliations1. Jiangnan University; 2. Jiangsu Provincial Key Laboratory of MEMS Sensors and ASIC Manufacturing Technology; 3. Wuxi NCE Power Company, Ltd
A fast extraction method of negative bias temperature instability (NBTI) generated permanent defects activation energy using temperature step stress
AuthorsRui Gao; Zixuan Wang; Zhigang Li; Chao Li; Yujuan He; Xiaowen Zhang; Xiaoling Lin; Liwei Wang; Yiqiang Chen; Guoguang Lu
Affiliations1. National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component; 2. School of Integrated Circuits; 3. School of Electronic Engineering and Automation
Thermal noise model of nanoscale fully-depleted silicon-on-insulator MOSFETs
AuthorsTianxiang Yue; Qun Wei; Wenpeng Zhang; Xiaofei Jia
Affiliations1. Xidian University; 2. Ankang University
Paper-based multi-gate EDL transistors with differentiated bottom and lateral gate coupling for multi-input neuromorphic integration
AuthorsDantong Wang; Xiaolong Zeng; Yurong Liu; Rongsheng Chen; Kuiwei Geng
Affiliations1. School of Microelectronics, South China University of Technology
Self-compensation by silicon DX centers in ultrawide-bandgap nitrides
AuthorsJohn L Lyons; Darshana Wickramaratne
Affiliations1. US Naval Research Laboratory
Improving Robustness and Variability Tolerance in SRAM-Based In-Memory Computing Using Body Bias
AuthorsNeha Gupta; Lomash Chandra Acharya; Khoirom Johnson Singh; Mahipal Dargupally; Abhishek Acharya; S. Dasgupta; Anand Bulusu
Affiliations1. Indian Institute of Technology Roorkee; 2. Dhanamanjuri University; 3. Sardar Vallabhbhai National Institute of Technology; 4. IIT Roorkee
Leakage Current Suppression in RB-IGCTs through Proton Irradiation: Mechanism and Strategy Design
AuthorsSu Yan; chunpin ren; zhitao huang; xiaozhao li; jiapeng liu; xiaoyuan liu; xingchen wang; xiaoguang wei; Bin Gao; jinpeng wu; rong zeng
Affiliations1. Huairou Laboratory; 2. Tsinghua University
Impact of CMP surface quality and pre-epitaxial H 2 treatment on the surface defect mitigation and electrical characteristics of 6.5 kV SiC MOSFET
AuthorsChi-Hsiang Hsieh; Chiao-Yang Cheng; Yi-Kai Hsiao; Tzu-Yi Lee; Yi-Chang Wu; Yan-Kuin Su; Chao-Chang A Chen; Po-Tsung Lee; Hao-Chung Kuo
Affiliations1. Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University; 2. Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University; 3. Semiconductor Research Center, Hon Hai Research Institute; 4. GeChi Compound Semiconductor Co. Ltd; 5. National Taiwan University of Science and Technology; 6. Chung Yuan Christian University
High-speed, self-powered and polarization-sensitive photodetector based on FePSe 3 /ReS 2 heterojunction
AuthorsYanliang Zhu; Yunfei Wang; Xingyu Zhou; Keyu Qian; Yujin He; Yike Li; Haiyan Nan; Shaoqing Xiao; Zhengjin Weng
Affiliations1. Jiangnan University
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