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Review Cycle Records

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IOP SCIE 非OA
2026新锐 4区2025中科院 4区2025 JCR Q3
99.2平均天数
89.5中位天数
46最短天数
175最长天数
1792025发文量

Paper Review Records

全部论文审稿周期

10 篇有效样本 · 按发表日期由新到旧排列
审稿天数=录用日期-收稿日期;保留 PDF/DOI/网页源链接

46 天

Synergistic enhancement of threshold voltage in AlGaN/GaN HEMTs using ferroelectric HfO 2 /ZrO 2 gate dielectric and partial barrier recess

作者Xinghuan Li; Zijing Xie; Xiaoyi Liu; Xiao Ma; Hong Wang

作者单位1. South China University of Technology

PDF源文件 DOI 网页
72 天

Degradation mechanism of static and capacitance characteristics of 700 V p-GaN gate HEMT under repetitive unclamped inductive switching stress

作者Teng Liu; Linna Zhao; Chenghao Li; Ruijie Zhao; Xiaofeng Gu; Chenkai Zhu; Zhuo Yang; Qian Yang; Zongqing Li

作者单位1. Jiangnan University; 2. Jiangsu Provincial Key Laboratory of MEMS Sensors and ASIC Manufacturing Technology; 3. Wuxi NCE Power Company, Ltd

PDF源文件 DOI 网页
147 天

A fast extraction method of negative bias temperature instability (NBTI) generated permanent defects activation energy using temperature step stress

作者Rui Gao; Zixuan Wang; Zhigang Li; Chao Li; Yujuan He; Xiaowen Zhang; Xiaoling Lin; Liwei Wang; Yiqiang Chen; Guoguang Lu

作者单位1. National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component; 2. School of Integrated Circuits; 3. School of Electronic Engineering and Automation

PDF源文件 DOI 网页
84 天

Thermal noise model of nanoscale fully-depleted silicon-on-insulator MOSFETs

作者Tianxiang Yue; Qun Wei; Wenpeng Zhang; Xiaofei Jia

作者单位1. Xidian University; 2. Ankang University

PDF源文件 DOI 网页
64 天

Paper-based multi-gate EDL transistors with differentiated bottom and lateral gate coupling for multi-input neuromorphic integration

作者Dantong Wang; Xiaolong Zeng; Yurong Liu; Rongsheng Chen; Kuiwei Geng

作者单位1. School of Microelectronics, South China University of Technology

PDF源文件 DOI 网页
90 天

Self-compensation by silicon DX centers in ultrawide-bandgap nitrides

作者John L Lyons; Darshana Wickramaratne

作者单位1. US Naval Research Laboratory

PDF源文件 DOI 网页
175 天

Improving Robustness and Variability Tolerance in SRAM-Based In-Memory Computing Using Body Bias

作者Neha Gupta; Lomash Chandra Acharya; Khoirom Johnson Singh; Mahipal Dargupally; Abhishek Acharya; S. Dasgupta; Anand Bulusu

作者单位1. Indian Institute of Technology Roorkee; 2. Dhanamanjuri University; 3. Sardar Vallabhbhai National Institute of Technology; 4. IIT Roorkee

PDF源文件 DOI 网页
89 天

Leakage Current Suppression in RB-IGCTs through Proton Irradiation: Mechanism and Strategy Design

作者Su Yan; chunpin ren; zhitao huang; xiaozhao li; jiapeng liu; xiaoyuan liu; xingchen wang; xiaoguang wei; Bin Gao; jinpeng wu; rong zeng

作者单位1. Huairou Laboratory; 2. Tsinghua University

PDF源文件 DOI 网页
100 天

Impact of CMP surface quality and pre-epitaxial H 2 treatment on the surface defect mitigation and electrical characteristics of 6.5 kV SiC MOSFET

作者Chi-Hsiang Hsieh; Chiao-Yang Cheng; Yi-Kai Hsiao; Tzu-Yi Lee; Yi-Chang Wu; Yan-Kuin Su; Chao-Chang A Chen; Po-Tsung Lee; Hao-Chung Kuo

作者单位1. Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University; 2. Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University; 3. Semiconductor Research Center, Hon Hai Research Institute; 4. GeChi Compound Semiconductor Co. Ltd; 5. National Taiwan University of Science and Technology; 6. Chung Yuan Christian University

PDF源文件 DOI 网页
125 天

High-speed, self-powered and polarization-sensitive photodetector based on FePSe 3 /ReS 2 heterojunction

作者Yanliang Zhu; Yunfei Wang; Xingyu Zhou; Keyu Qian; Yujin He; Yike Li; Haiyan Nan; Shaoqing Xiao; Zhengjin Weng

作者单位1. Jiangnan University

PDF源文件 DOI 网页

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我是环境工程专业,需要一篇 SCI,希望 3 个月内见刊。没有基金,也没有大牛挂名,可以投哪些期刊?

CrushSCI回复

可以。先按 90 天时限做可行性筛选,同步查找无基金、无知名作者挂靠的典型论文案例,作为选刊依据。重点核对研究质量与期刊 scope。

拟题建议
《融合机器学习与生命周期评价的城市污水处理碳排放预测与优化》

样本口径2026 年最近 5 篇有效论文样本

平均审稿96.4 天

中位数77 天

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