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Degradation mechanism of static and capacitance characteristics of 700 V p-GaN gate HEMT under repetitive unclamped inductive switching stress
作者Teng Liu; Linna Zhao; Chenghao Li; Ruijie Zhao; Xiaofeng Gu; Chenkai Zhu; Zhuo Yang; Qian Yang; Zongqing Li
作者单位1. Jiangnan University; 2. Jiangsu Provincial Key Laboratory of MEMS Sensors and ASIC Manufacturing Technology; 3. Wuxi NCE Power Company, Ltd
A fast extraction method of negative bias temperature instability (NBTI) generated permanent defects activation energy using temperature step stress
作者Rui Gao; Zixuan Wang; Zhigang Li; Chao Li; Yujuan He; Xiaowen Zhang; Xiaoling Lin; Liwei Wang; Yiqiang Chen; Guoguang Lu
作者单位1. National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component; 2. School of Integrated Circuits; 3. School of Electronic Engineering and Automation
Improving Robustness and Variability Tolerance in SRAM-Based In-Memory Computing Using Body Bias
作者Neha Gupta; Lomash Chandra Acharya; Khoirom Johnson Singh; Mahipal Dargupally; Abhishek Acharya; S. Dasgupta; Anand Bulusu
作者单位1. Indian Institute of Technology Roorkee; 2. Dhanamanjuri University; 3. Sardar Vallabhbhai National Institute of Technology; 4. IIT Roorkee
Impact of CMP surface quality and pre-epitaxial H 2 treatment on the surface defect mitigation and electrical characteristics of 6.5 kV SiC MOSFET
作者Chi-Hsiang Hsieh; Chiao-Yang Cheng; Yi-Kai Hsiao; Tzu-Yi Lee; Yi-Chang Wu; Yan-Kuin Su; Chao-Chang A Chen; Po-Tsung Lee; Hao-Chung Kuo
作者单位1. Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University; 2. Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University; 3. Semiconductor Research Center, Hon Hai Research Institute; 4. GeChi Compound Semiconductor Co. Ltd; 5. National Taiwan University of Science and Technology; 6. Chung Yuan Christian University
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