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SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IOP 非OA 2026新锐 4区2025中科院 4区 已自动采集 最新完整样本 10 篇 平均 99.2 天

数据更新 2026-07-17 · 完整周期 10 篇 · 日期来源可逐条复核

SEMICONDUCTOR SCIENCE AND TECHNOLOGY已收录10篇完整论文周期样本,平均审稿99.2 天,中位审稿89.5 天。2025中科院4区,非OA,2025发文量179。页面含论文收到日期、录用日期、PDF、DOI和出版社网页溯源入口。

99.2平均天数
89.5中位天数
46最短天数
175最长天数
10最新论文
1792025发文量

Latest Papers

最新发表论文审稿周期

审稿天数=录用日期-收到日期;保留 PDF/DOI/网页源链接

46

Synergistic enhancement of threshold voltage in AlGaN/GaN HEMTs using ferroelectric HfO 2 /ZrO 2 gate dielectric and partial barrier recess

作者Xinghuan Li; Zijing Xie; Xiaoyi Liu; Xiao Ma; Hong Wang

作者单位1. South China University of Technology

PDF源文件 DOI 网页
72

Degradation mechanism of static and capacitance characteristics of 700 V p-GaN gate HEMT under repetitive unclamped inductive switching stress

作者Teng Liu; Linna Zhao; Chenghao Li; Ruijie Zhao; Xiaofeng Gu; Chenkai Zhu; Zhuo Yang; Qian Yang; Zongqing Li

作者单位1. Jiangnan University; 2. Jiangsu Provincial Key Laboratory of MEMS Sensors and ASIC Manufacturing Technology; 3. Wuxi NCE Power Company, Ltd

PDF源文件 DOI 网页
147

A fast extraction method of negative bias temperature instability (NBTI) generated permanent defects activation energy using temperature step stress

作者Rui Gao; Zixuan Wang; Zhigang Li; Chao Li; Yujuan He; Xiaowen Zhang; Xiaoling Lin; Liwei Wang; Yiqiang Chen; Guoguang Lu

作者单位1. National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component; 2. School of Integrated Circuits; 3. School of Electronic Engineering and Automation

PDF源文件 DOI 网页
84

Thermal noise model of nanoscale fully-depleted silicon-on-insulator MOSFETs

作者Tianxiang Yue; Qun Wei; Wenpeng Zhang; Xiaofei Jia

作者单位1. Xidian University; 2. Ankang University

PDF源文件 DOI 网页
64

Paper-based multi-gate EDL transistors with differentiated bottom and lateral gate coupling for multi-input neuromorphic integration

作者Dantong Wang; Xiaolong Zeng; Yurong Liu; Rongsheng Chen; Kuiwei Geng

作者单位1. School of Microelectronics, South China University of Technology

PDF源文件 DOI 网页
90

Self-compensation by silicon DX centers in ultrawide-bandgap nitrides

作者John L Lyons; Darshana Wickramaratne

作者单位1. US Naval Research Laboratory

PDF源文件 DOI 网页
175

Improving Robustness and Variability Tolerance in SRAM-Based In-Memory Computing Using Body Bias

作者Neha Gupta; Lomash Chandra Acharya; Khoirom Johnson Singh; Mahipal Dargupally; Abhishek Acharya; S. Dasgupta; Anand Bulusu

作者单位1. Indian Institute of Technology Roorkee; 2. Dhanamanjuri University; 3. Sardar Vallabhbhai National Institute of Technology; 4. IIT Roorkee

PDF源文件 DOI 网页
89

Leakage Current Suppression in RB-IGCTs through Proton Irradiation: Mechanism and Strategy Design

作者Su Yan; chunpin ren; zhitao huang; xiaozhao li; jiapeng liu; xiaoyuan liu; xingchen wang; xiaoguang wei; Bin Gao; jinpeng wu; rong zeng

作者单位1. Huairou Laboratory; 2. Tsinghua University

PDF源文件 DOI 网页
100

Impact of CMP surface quality and pre-epitaxial H 2 treatment on the surface defect mitigation and electrical characteristics of 6.5 kV SiC MOSFET

作者Chi-Hsiang Hsieh; Chiao-Yang Cheng; Yi-Kai Hsiao; Tzu-Yi Lee; Yi-Chang Wu; Yan-Kuin Su; Chao-Chang A Chen; Po-Tsung Lee; Hao-Chung Kuo

作者单位1. Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University; 2. Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University; 3. Semiconductor Research Center, Hon Hai Research Institute; 4. GeChi Compound Semiconductor Co. Ltd; 5. National Taiwan University of Science and Technology; 6. Chung Yuan Christian University

PDF源文件 DOI 网页
125

High-speed, self-powered and polarization-sensitive photodetector based on FePSe 3 /ReS 2 heterojunction

作者Yanliang Zhu; Yunfei Wang; Xingyu Zhou; Keyu Qian; Yujin He; Yike Li; Haiyan Nan; Shaoqing Xiao; Zhengjin Weng

作者单位1. Jiangnan University

PDF源文件 DOI 网页