Paper Review Records
All Paper Review Records
18 valid samples · Newest publication first
Review days = acceptance date − received date. PDF, DOI, and publisher-page sources are retained.
180
days
TCAD-calibrated ML for trap-induced degradation in AlGaN/GaN HEMTs
AuthorsNiketa Sharma; Amit Kumar Sharma; Pharyanshu Kachhawa
AffiliationsDepartment of Computer Science Engineering, Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, Rajasthan, 302017, India; Department of Physical Sciences, Banasthali Vidyapith, Tonk, Rajasthan, 304022, India; Centre for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, United Kingdom
135
days
Enhanced capture cross-section of electron traps detrimental to 4H-SiC PiN diode performance (unlike 4H-SiC JBS diodes)
AuthorsShikha Kumari; Besar Asllani; Pierre Brosselard; Dominique Planson; P. Vigneshwara Raja
AffiliationsDepartment of EECE, Indian Institute of Technology Dharwad, Karnataka, 580011, India; Supergrid Institute, 23 Rue Cyprian, 69611, Villeurbanne Cedex, France; Univ. Lyon, INSA Lyon, Univ. Claude Bernard Lyon 1, Ecole Centrale Lyon, CNRS, Ampère, Villeurbanne Cedex, F-69621, France
191
days
Comparative multiple-cell upset robustness of 8 T and 6 T complementary FET SRAM arrays under heavy-ion irradiation
AuthorsWangyong Chen; Yiting Ouyang; Zhengxin Zhang; Minghui Dong; Chuhao Chen; Linlin Cai
AffiliationsSchool of Microelectronics Science and Technology, Sun Yat-Sen University, Guangzhou, 510275, China; Zhuhai Key Laboratory of Intelligent EDA and Reliability Design of Advanced Integrated Circuits, Zhuhai, 519082, China
193
days
Performance optimization through thermal tolerance and doping sensitivity of TreeFET and novel H-shaped TreeFET from device to circuit level
AuthorsM. Balasubrahmanyam; Ekta Goel; G. Erna
AffiliationsDepartment of Electronics and Communication Engineering, National Institute of Technology, Warangal, Telangana, 506004, India; Department of Electronics and Communication Engineering, PACE Institute of Technology & Sciences (Autonomous), Ongole, 523272, Andhra Pradesh, India
257
days
Theoretical prediction of the full-stage creep and lifetime of sintered nano-silver based on entropy-generation and pore-synergistic evolution
AuthorsHe Gong; Binquan Liu; Shulan Yang; Yao Yao
AffiliationsSchool of Civil Engineering and Architecture, Changzhou Institute of Technology, Changzhou, 213002, China; School of Ordnance Science and Technology, Xi'an Technological University, Xi'an, 710021, China; School of Science, Xi'an University of Architecture and Technology, Xi'an, 710055, China; School of Mechanics, Civil Engineering and Architecture, Northwestern Polytechnical University, Xi'an, 710072, China
60
days
Study on the drift and recovery of Vth and Ron in 650 V p-GaN gate HEMTs under repetitive short-circuit stress
AuthorsJiaofen Yang; Hongyue Wang; Ming Tao; Liang Chen; Ding Song; Bin Peng; Guoguang Lu
AffiliationsNational Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, the China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI), Guangzhou, 511370, China; College of Electrical and Information Engineering, Hunan University, Changsha, 410082, China; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, 510555, China.; State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, the Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China
302
days
Dark current response characteristics of InGaAs PIN detectors for displacement damage dose measurement
AuthorsShuaibin Du; Jing Sun; Chengcheng Shi; Tianyu Zhao; Chengfa He; Qi Guo; Yudong Li
AffiliationsXinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, China; University of Chinese Academy of Sciences, Beijing, China
96
days
Microbump reliability of silicon bridges for chiplets heterogeneous integration
AuthorsJohn H. Lau; Ning Liu; Tzyy-Jang Tseng
AffiliationsUnimicron Technology Corporation, Taoyun, Taiwan
116
days
Gate-metal-dependent transition of leakage mechanisms in AlGaN/GaN HEMTs under temperature-dependent conditions
AuthorsMaria Glória Caño de Andrade; Josué Cândido; Eddy Simoen
AffiliationsSão Paulo State University (UNESP), Institute of Science and Technology, Av. 3 de Março, n. 511, 18087-180, Sorocaba, Brazil; Ghent University, Belgium; imec Kapeldreef 75, B-3001, Leuven, Belgium
223
days
Machine learning approach for accelerated reliability testing of integrated photonics
AuthorsLea Chaccour; Kristif Prifti; Ben Hasenson; Dzmitry Pustakhod; Sylwester Latkowski
AffiliationsPhotonics Integration Technology Center (PITC), Eindhoven University of Technology (TU/e), De Groene Loper 19, Eindhoven, 5612 AP, The Netherlands; Photonic Integration Group, Eindhoven University of Technology (TU/e), De Groene Loper 19, Eindhoven, 5612 AP, The Netherlands; VTEC Lasers & Sensors, Torenallee 20, Eindhoven, 5617 BC, The Netherlands
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SampleLatest 5 valid paper samples from 2026
Average review96.4 days
Median77 days