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全部论文审稿周期
18 篇有效样本 · 按发表日期由新到旧排列
审稿天数=录用日期-收稿日期；保留 PDF/DOI/网页源链接
180
天
TCAD-calibrated ML for trap-induced degradation in AlGaN/GaN HEMTs
作者Niketa Sharma; Amit Kumar Sharma; Pharyanshu Kachhawa
作者单位Department of Computer Science Engineering, Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, Rajasthan, 302017, India; Department of Physical Sciences, Banasthali Vidyapith, Tonk, Rajasthan, 304022, India; Centre for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, United Kingdom
135
天
Enhanced capture cross-section of electron traps detrimental to 4H-SiC PiN diode performance (unlike 4H-SiC JBS diodes)
作者Shikha Kumari; Besar Asllani; Pierre Brosselard; Dominique Planson; P. Vigneshwara Raja
作者单位Department of EECE, Indian Institute of Technology Dharwad, Karnataka, 580011, India; Supergrid Institute, 23 Rue Cyprian, 69611, Villeurbanne Cedex, France; Univ. Lyon, INSA Lyon, Univ. Claude Bernard Lyon 1, Ecole Centrale Lyon, CNRS, Ampère, Villeurbanne Cedex, F-69621, France
191
天
Comparative multiple-cell upset robustness of 8 T and 6 T complementary FET SRAM arrays under heavy-ion irradiation
作者Wangyong Chen; Yiting Ouyang; Zhengxin Zhang; Minghui Dong; Chuhao Chen; Linlin Cai
作者单位School of Microelectronics Science and Technology, Sun Yat-Sen University, Guangzhou, 510275, China; Zhuhai Key Laboratory of Intelligent EDA and Reliability Design of Advanced Integrated Circuits, Zhuhai, 519082, China
193
天
Performance optimization through thermal tolerance and doping sensitivity of TreeFET and novel H-shaped TreeFET from device to circuit level
作者M. Balasubrahmanyam; Ekta Goel; G. Erna
作者单位Department of Electronics and Communication Engineering, National Institute of Technology, Warangal, Telangana, 506004, India; Department of Electronics and Communication Engineering, PACE Institute of Technology & Sciences (Autonomous), Ongole, 523272, Andhra Pradesh, India
257
天
Theoretical prediction of the full-stage creep and lifetime of sintered nano-silver based on entropy-generation and pore-synergistic evolution
作者He Gong; Binquan Liu; Shulan Yang; Yao Yao
作者单位School of Civil Engineering and Architecture, Changzhou Institute of Technology, Changzhou, 213002, China; School of Ordnance Science and Technology, Xi'an Technological University, Xi'an, 710021, China; School of Science, Xi'an University of Architecture and Technology, Xi'an, 710055, China; School of Mechanics, Civil Engineering and Architecture, Northwestern Polytechnical University, Xi'an, 710072, China
60
天
Study on the drift and recovery of Vth and Ron in 650 V p-GaN gate HEMTs under repetitive short-circuit stress
作者Jiaofen Yang; Hongyue Wang; Ming Tao; Liang Chen; Ding Song; Bin Peng; Guoguang Lu
作者单位National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, the China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI), Guangzhou, 511370, China; College of Electrical and Information Engineering, Hunan University, Changsha, 410082, China; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, 510555, China.; State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, the Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China
302
天
Dark current response characteristics of InGaAs PIN detectors for displacement damage dose measurement
作者Shuaibin Du; Jing Sun; Chengcheng Shi; Tianyu Zhao; Chengfa He; Qi Guo; Yudong Li
作者单位Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, China; University of Chinese Academy of Sciences, Beijing, China
96
天
116
天
Gate-metal-dependent transition of leakage mechanisms in AlGaN/GaN HEMTs under temperature-dependent conditions
作者Maria Glória Caño de Andrade; Josué Cândido; Eddy Simoen
作者单位São Paulo State University (UNESP), Institute of Science and Technology, Av. 3 de Março, n. 511, 18087-180, Sorocaba, Brazil; Ghent University, Belgium; imec Kapeldreef 75, B-3001, Leuven, Belgium
223
天
Machine learning approach for accelerated reliability testing of integrated photonics
作者Lea Chaccour; Kristif Prifti; Ben Hasenson; Dzmitry Pustakhod; Sylwester Latkowski
作者单位Photonics Integration Technology Center (PITC), Eindhoven University of Technology (TU/e), De Groene Loper 19, Eindhoven, 5612 AP, The Netherlands; Photonic Integration Group, Eindhoven University of Technology (TU/e), De Groene Loper 19, Eindhoven, 5612 AP, The Netherlands; VTEC Lasers & Sensors, Torenallee 20, Eindhoven, 5617 BC, The Netherlands
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样本口径2026 年最近 5 篇有效论文样本
平均审稿96.4 天
中位数77 天