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全部论文审稿周期
17 篇有效样本 · 按发表日期由新到旧排列
审稿天数=录用日期-收稿日期；保留 PDF/DOI/网页源链接
246
天
Exploring the relationship between doping and Ti-silicidation for advanced FDSOI applications
作者Marie Merlin; Théo Cabaret; Helen Grampeix; Nicolas Gauthier; Mario Ghostine; Joel Kanyandekwe; Philippe Rodriguez; Patrice Gergaud
作者单位Univ. Grenoble Alpes, CEA, Leti, 38000, Grenoble, France
245
天
53
天
Modelling the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs
作者S. Milazzo; G. Greco; G. Giorgino; C. Miccoli; S. Mirabella; F. Iucolano; F. Roccaforte
作者单位Consiglio Nazionale delle Ricerche-Institute for Microelectronics and Microsystems, Catania 95121, Italy; STMicroelectronics, Catania 95121, Italy; Department of Physics and Astronomy “Ettore Majorana”, University of Catania, via Santa Sofia 64, Catania 95123, Italy; CNR-IMM University Unit, via Santa Sofia 64, Catania 95123, Italy
44
天
Variability in HfO2-based memristors under pulse operation
作者D. Maldonado; C. Acal; H. Ortiz; F. Navas-Gomez; A. Cantudo; C. Wenger; E. Pérez; J.B. Roldán
作者单位Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, 18071 Granada, Spain; Departamento de Informática y Estadística, Esc. Tec. Sup. de Ingeniería Informática, Universidad Rey Juan Carlos, Móstoles 28933, Madrid, Spain; Departamento de Estadística e Investigación Operativa e Instituto de Matemáticas (IMAG), Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada, Spain; IHP - Leibniz-Institute for High Performance Microelectronics, 15236 Frankfurt (Oder), Germany; Brandenburgische Technische Universität (BTU) Cottbus-Senftenberg, 03046 Cottbus, Germany; Institute Carlos I for Theoretical and Computational Physics, University of Granada, 18071 Granada, Spain
229
天
Evaluation of the robustness of the defect-centric model for defect parameter extraction from RTN and BTI analysis using Comphy
作者Martin E.M. Loesener; Tobias Zinsler; Bernhard Stampfer; Florian Wimmer; Eleftherios Ioannidis; Walter Pflanzl; Rainer Minixhofer; Tibor Grasser; Michael Waltl
作者单位ams-OSRAM AG, Premstätten, Austria; Christian Doppler Laboratory for Single Defect Spectroscopy at the Institute for Microelectronics, TU Wien, Vienna, Austria; Institute for Microelectronics, TU Wien, Vienna, Austria
266
天
Simulation of SAF-enhanced multilayered STT-MRAM structures
作者M. Bendra; W. Goes; S. Selberherr; V. Sverdlov
作者单位Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, Wien, A-1040, Austria; Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, Wien, A-1040, Austria; Silvaco Europe Ltd., Compass Point, St Ives, Cambridge, PE27 5JL, United Kingdom
246
天
Extensive FPGA and ASIC resource comparison for blind I/Q imbalance estimators and compensators
作者Moritz Tockner; Moritz Stockinger; Oliver Lang; Andreas Meingassner; Mario Huemer
作者单位Institute of Signal Processing, Johannes Kepler University Linz, Altenberger Straße 66, 4040 Linz, Austria; Christian Doppler Laboratory for Digitally Assisted RF Transceivers for Future Mobile Communications, Austria
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样本口径2026 年最近 5 篇有效论文样本
平均审稿96.4 天
中位数77 天