Paper Review Records
全部论文审稿周期
10 篇有效样本 · 按发表日期由新到旧排列
审稿天数=录用日期-收稿日期;保留 PDF/DOI/网页源链接
175
天
Improving Robustness and Variability Tolerance in SRAM-Based In-Memory Computing Using Body Bias
作者
Neha Gupta; Lomash Chandra Acharya; Khoirom Johnson Singh; Mahipal Dargupally; Abhishek Acharya; S. Dasgupta; Anand Bulusu展开收起
作者单位
1. Indian Institute of Technology Roorkee; 2. Dhanamanjuri University; 3. Sardar Vallabhbhai National Institute of Technology; 4. IIT Roorkee展开收起
89
天
Leakage Current Suppression in RB-IGCTs through Proton Irradiation: Mechanism and Strategy Design
作者
Su Yan; chunpin ren; zhitao huang; xiaozhao li; jiapeng liu; xiaoyuan liu; xingchen wang; xiaoguang wei; Bin Gao; jinpeng wu; rong zeng展开收起
作者单位
1. Huairou Laboratory; 2. Tsinghua University展开收起
100
天
Impact of CMP surface quality and pre-epitaxial H 2 treatment on the surface defect mitigation and electrical characteristics of 6.5 kV SiC MOSFET
作者
Chi-Hsiang Hsieh; Chiao-Yang Cheng; Yi-Kai Hsiao; Tzu-Yi Lee; Yi-Chang Wu; Yan-Kuin Su; Chao-Chang A Chen; Po-Tsung Lee; Hao-Chung Kuo展开收起
作者单位
1. Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University; 2. Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University; 3. Semiconductor Research Center, Hon Hai Research Institute; 4. GeChi Compound Semiconductor Co. Ltd; 5. National Taiwan University of Science and Technology; 6. Chung Yuan Christian University展开收起
125
天
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