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141.6平均天数
119中位天数
46最短天数
326最长天数
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Paper Review Records

全部论文审稿周期

19 篇有效样本 · 按发表日期由新到旧排列
审稿天数=录用日期-收稿日期;保留 PDF/DOI/网页源链接

135 天

Precise evaluation of silicided source/drain contacts using the bridge-contact resistance method

作者
Seunggyu Hwang; Bogeun Son; Hyunjung Lee; Jiyeong Yun; Honghwi Park; Hongsik Park展开收起
作者单位
School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, South Korea; Smart Manufacturing Research Center, Gumi Electronics & Information Technology Research Institute (GERI), Gumi-si, Gyeongbuk 39171, South Korea; School of Electronic Engineering, Kumoh National Institute of Technology, Gumi-si, Gyeongbuk 39177, South Korea; School of Electronics Engineering, Kyungpook National University, Daegu 41566, South Korea展开收起
PDF源文件 DOI 网页
126 天

Interface-activated SrBiO₃/rGO nanoplatform for non-enzymatic electrochemical glucose detection

作者
Zarmeem Fatima; Meznah M. Alanazi; Shaimaa A.M. Abdelmohsen; Hussain Sawwan; Waqas Ul Arifein; Abhinav Kumar; Reda A. Haggam展开收起
作者单位
Department of Physics, Government Graduate College, Taunsa Sharif 32100, Pakistan; Department of Physics, College of Science, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia; Department of Chemical Engineering, College of Engineering, King Khalid University, Abha 61411, Saudi Arabia; Institute of Southern Punjab, Multan, Pakistan; Department of Mathematical Sciences, Saveetha School of Engineering, SIMATS, Chennai, 602105, Tamilnadu, India; Department of Technical Sciences, Western Caspian University, Baku, Azerbaijan; Department of Mechanical Engineering and Renewable Energy, Technical Engineering College, The Islamic University, Najaf, Iraq; Department of Chemistry, Faculty of Science, Islamic University of Madinah, Madinah 42351, Saudi Arabia展开收起
PDF源文件 DOI 网页
104 天

Wide-range characterization of GaN HEMTs and its associated compact modeling procedure

作者
Salim Dahmani; Cyril Buttay; Bruno Allard; Xuyang Lu; Ke Li; Elhadji Adama Seck; Ali Soltani; Hassan Maher展开收起
作者单位
INSA Lyon, CNRS, Ecole Centrale de Lyon, Universite Claude Bernard Lyon 1, Ampère, UMR CNRS 5005, 69621 Villeurbanne, France; Power Electronics, Machines and Control Research Institute, University of Nottingham, NG7 2RD Nottingham, UK; Laboratoire Nanotechnologies Nanosystèmes (LN2), CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT) Université de Sherbrooke, Sherbrooke, Canada展开收起
PDF源文件 DOI 网页
324 天

Wire resistance impact and compensation methods in analog switching 1R memristive crossbar arrays

作者
Eter Mgeladze; Po Yuen Ho; Richard Schroedter; Ronald Tetzlaff; Thomas Mikolajick; Stefan Slesazeck展开收起
作者单位
Namlab gGmbH, Dresden, Germany; Chair of Fundamentals of Electrical Engineering at the TU Dresden, Dresden, Germany; Chair of Nanoelectronics at the TU Dresden, Dresden, Germany展开收起
PDF源文件 DOI 网页
46 天

Metal-insulator-semiconductor diodes based on solution-processed ZrO2 and ZnO thin films fabricated on plastic substrates

作者
Ovier Obregon; David Barba; Miguel A. Dominguez展开收起
作者单位
Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla (BUAP), Puebla 72570, Mexico; Institut National de la Recherche Scientifique, Varennes, QC J3X 1P7, Canada展开收起
PDF源文件 DOI 网页
85 天

Bonding of micro LEDs using wet reflow process of indium bumps based on SU-8 solder mask

作者
Shuangjia Bai; Taifu Lang; Xin Lin; Shuaishuai Wang; Zhihua Wang; Chang Lin; Qun Yan; Jie Sun展开收起
作者单位
Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou 350100, China; Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China; Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden展开收起
PDF源文件 DOI 网页

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《融合机器学习与生命周期评价的城市污水处理碳排放预测与优化》

样本口径2026 年最近 5 篇有效论文样本

平均审稿62 天

中位数65 天

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