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Materials Science
Materials Science
Paper Review Records
All Paper Review Records
20 valid samples · Newest publication first
Review days = acceptance date − received date. PDF, DOI, and publisher-page sources are retained.
204
days
Inkjet‐Printed h‐BN Memristors with a Record Endurance under Low‐Currents
AuthorsPere Aran Vilà; Giovanni Vescio; Juan Castillo; Francisco Palacio; Blas Garrido; Sergi Hernández; Albert Cirera
Affiliations1. Department of Electronic and Biomedical Engineering Universitat de Barcelona Barcelona Spain; 2. Department of Electronic Engineering Universitat Politècnica de Catalunya Barcelona Spain; 3. Department of Systems Universidad de Nariño San Juan de Pasto Colombia
372
days
Amorphous, Highly Conductive Pr 0.7 Ca 0.3 MnO 3 for Area‐Dependent Resistive Switching AlO x Bilayer Devices
AuthorsMax Buczek; Iliyas T. Dossayev; Clemens Wittberg; Yen‐Po Liu; Kalle Goß; David N. Mueller; Zoe Moos; Zhenhao Liu; Karsten Bittkau; Mohammad Hassan Sultani; Stephan Menzel; Susanne Hoffmann‐Eifert; Regina Dittmann
Affiliations1. Peter Grünberg Institute 7 (Electronic Materials) Jülich Germany; 2. Peter Grünberg Institute 6 (Electronic Properties) Jülich Germany; 3. Institute of Energy Materials and Devices Jülich Germany
149
days
TWIN: Ternary Weight and Input Neural Network Accelerators Using an Experimentally Informed Ferroelectric Carbon Nanotube FET Compact Model
AuthorsMohammad Khaleqi Qaleh Jooq; Abdolah Amirany; Martin F. Sarott; Beatriz Noheda; Johanna van Gent González; Kian Jafari; Elham Heidari; Mostafa Rahimi Azghadi; Hamed Dalir; Saeed Afshar
Affiliations1. The International Centre for Neuromorphic Systems, MARCS Institute for Brain and Behaviour Western Sydney University Penrith New South Wales Australia; 2. School of Built Environment, Engineering and Computing Leeds Beckett University Leeds UK; 3. Department of Electrical and Computer Engineering University of Florida Gainesville Florida USA; 4. Florida Semiconductor Institute University of Florida Gainesville Florida USA; 5. The Zernike Institute for Advanced Materials University of Groningen Groningen The Netherlands; 6. The Groningen Cognitive Systems and Materials Center (CogniGron) University of Groningen Groningen The Netherlands; 7. Interdisciplinary Institute for Technological Innovation (3IT) and Faculty of Engineering Université de Sherbrooke Québec Canada; 8. Laboratoire Nanotechnologies Nanosystèmes (LN2), CNRS‐IRL 3463 Université de Sherbrooke Québec Canada; 9. College of Science and Engineering James Cook University Queensland Australia
157
days
MoS 2 /Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations
AuthorsMd. Ibrahim Ahmed; Sharnali Islam
Affiliations1. Department of Electrical and Electronic Engineering University of Dhaka Dhaka Bangladesh; 2. Department of Electrical and Electronic Engineering National Institute of Textile Engineering and Research (NITER) Dhaka Bangladesh
172
days
Thermoelectric p‐Type Iron‐Based Ethylenetetrathiolate Coordination Polymers
AuthorsMalar Auxilia Francis; Mari Heikkinen; Girish C. Tewari; Kristoffer Meinander; Johan Lindén; Maarit Karppinen
Affiliations1. Department of Chemistry and Materials Science Aalto University Espoo Finland; 2. Department of Bioproducts and Biosystems Aalto University Espoo Finland; 3. Physics/Faculty of Science & Engineering Åbo Akademi Turku Finland
100
days
Two‐Dimensional Materials for Flexible Neuromorphic Devices: Materials, Engineering Strategies, Architectures, and Emerging Applications
AuthorsJunzhe Tang; Letian Dai
Affiliations1. Cuiying Honors College Lanzhou University Lanzhou Gansu People's Republic of China; 2. Center for Low‐Dimensional Quantum Materials Hubei University of Technology Wuhan Hubei People's Republic of China; 3. Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan Hubei People's Republic of China
128
days
Neuromorphic Deep‐Ultraviolet Signal Processing Using a‐Ga 2 O 3
AuthorsSidhant Sharma; Arthur Robert; Florian Wilke; Martin W. Allen; Valentina Baccetti; Jim G. Partridge; Hiep N. Tran
Affiliations1. School of Engineering RMIT University Melbourne Victoria Australia; 2. Department of Physics RMIT University Melbourne Victoria Australia; 3. Department of Electrical and Computer Engineering University of Canterbury Christchurch New Zealand; 4. MacDiarmid Institute for Advanced Materials and Nanotechnology University of Canterbury Christchurch New Zealand
140
days
Intrinsic Ferromagnetism and Surface Oxidation in Nb 2 FeC: Revealed by Synchrotron‐Based X‐Ray Spectro‐ and Microscopy
AuthorsSambhu Charan Das; Kuan‐Hung Chen; Wei‐Xuan Lin; Hsiao‐Tsu Wang; Cheng‐En Lee; Ping‐Hung Yeh; Cheng‐En Zhang; Chao‐Hung Du; Jau‐Wern Chiou; Huang‐Ming Tsai; Kim Hsu; Chun‐Chieh Wang; Jigang Zhou; Jian Wang; Sekhar Chandra Ray; Deepak Vishnu S. K.; Chun‐Wei Chen; Way‐Faung Pong
Affiliations1. Department of Physics Tamkang University New Taipei City Taiwan; 2. Department of Applied Physics National University of Kaohsiung Kaohsiung Taiwan; 3. National Synchrotron Radiation Research Center Hsinchu Taiwan; 4. Integrated Service Technology Incoperation Hsinchu Taiwan; 5. Battery Research and Development General Motors Warren Michigan USA; 6. Canadian Light Source University of Saskatchewan Saskatoon Saskatchewan Canada; 7. Department of Physics ITER Siksha ‘O’ Anusandhan Deemed to Be University Bhubaneswar Odisha India; 8. Department of Physics CSET University of South Africa Johannesburg South Africa; 9. Molecular Science and Technology Program Taiwan International Graduate Program (TIGP) Academia Sinica Taipei Taiwan; 10. Department of Chemistry National Tsing Hua University Hsinchu Taiwan; 11. Department of Materials Science and Engineering National Taiwan University Taipei Taiwan
193
days
Probing of Single‐Interface Dzyaloshinskii‐Moriya Interaction
AuthorsJi‐Sung Yu; Seong‐Hyub Lee; Minhwan Kim; Dae‐Yun Kim; Gunn‐Hee Han; Wooyoung Shim; Jiho Shin; Yohan Mok; Jaehun Cho; Duck‐Ho Kim; Sug‐Bong Choe
Affiliations1. Department of Physics and Astronomy Seoul National University Seoul Republic of Korea; 2. Center For Spintronics Korea Institute of Science and Technology (KIST) Seoul Republic of Korea; 3. Department of Physics Ewha Womans University Seoul Republic of Korea; 4. Division of Nanotechnology Daegu‐Gyeongbuk Institute of Science and Technology (DGIST) Daegu Republic of Korea
186
days
Low Thermal Resistance Architectures for AlGaN‐Based Semiconductor Devices
AuthorsKidus Guye; Davide Orlandini; Seungheon Shin; Andy Allerman; Damena Agonafer; Siddharth Rajan; Samuel Graham
Affiliations1. Department of Mechanical Engineering University of Maryland Maryland USA; 2. Department of Electrical and Computer Engineering The Ohio State University Columbus, Ohio USA; 3. Sandia National Laboratories Albuquerque New Mexico USA
Expert Matching · Case Demo
Turn Your Submission Goalsinto a Verifiable Journal Plan
Share your field, deadline, and author profile. CrushSCI uses real review records to suggest a title direction, shortlist journals, and estimate timelines.
Client
I work in environmental engineering and need an SCI paper published within three months. I have no grant funding or prominent co-author. Which journals could I target?
CrushSCI
Yes. We will first screen for feasibility against the 90-day deadline, then identify comparable papers without grant support or prominent co-authors. The final shortlist will prioritize research quality and journal scope.
- Suggested title
- Machine Learning and Life-Cycle Assessment for Predicting and Optimizing Carbon Emissions in Urban Wastewater Treatment
- Database shortlist
- Environmental Technology & Innovation
SampleLatest 5 valid paper samples from 2026
Average review96.4 days
Median77 days