材料科学
Paper Review Records
全部论文审稿周期
20 篇有效样本 · 按发表日期由新到旧排列
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Inkjet‐Printed h‐BN Memristors with a Record Endurance under Low‐Currents
作者Pere Aran Vilà; Giovanni Vescio; Juan Castillo; Francisco Palacio; Blas Garrido; Sergi Hernández; Albert Cirera
作者单位1. Department of Electronic and Biomedical Engineering Universitat de Barcelona Barcelona Spain; 2. Department of Electronic Engineering Universitat Politècnica de Catalunya Barcelona Spain; 3. Department of Systems Universidad de Nariño San Juan de Pasto Colombia
Amorphous, Highly Conductive Pr 0.7 Ca 0.3 MnO 3 for Area‐Dependent Resistive Switching AlO x Bilayer Devices
作者Max Buczek; Iliyas T. Dossayev; Clemens Wittberg; Yen‐Po Liu; Kalle Goß; David N. Mueller; Zoe Moos; Zhenhao Liu; Karsten Bittkau; Mohammad Hassan Sultani; Stephan Menzel; Susanne Hoffmann‐Eifert; Regina Dittmann
作者单位1. Peter Grünberg Institute 7 (Electronic Materials) Jülich Germany; 2. Peter Grünberg Institute 6 (Electronic Properties) Jülich Germany; 3. Institute of Energy Materials and Devices Jülich Germany
TWIN: Ternary Weight and Input Neural Network Accelerators Using an Experimentally Informed Ferroelectric Carbon Nanotube FET Compact Model
作者Mohammad Khaleqi Qaleh Jooq; Abdolah Amirany; Martin F. Sarott; Beatriz Noheda; Johanna van Gent González; Kian Jafari; Elham Heidari; Mostafa Rahimi Azghadi; Hamed Dalir; Saeed Afshar
作者单位1. The International Centre for Neuromorphic Systems, MARCS Institute for Brain and Behaviour Western Sydney University Penrith New South Wales Australia; 2. School of Built Environment, Engineering and Computing Leeds Beckett University Leeds UK; 3. Department of Electrical and Computer Engineering University of Florida Gainesville Florida USA; 4. Florida Semiconductor Institute University of Florida Gainesville Florida USA; 5. The Zernike Institute for Advanced Materials University of Groningen Groningen The Netherlands; 6. The Groningen Cognitive Systems and Materials Center (CogniGron) University of Groningen Groningen The Netherlands; 7. Interdisciplinary Institute for Technological Innovation (3IT) and Faculty of Engineering Université de Sherbrooke Québec Canada; 8. Laboratoire Nanotechnologies Nanosystèmes (LN2), CNRS‐IRL 3463 Université de Sherbrooke Québec Canada; 9. College of Science and Engineering James Cook University Queensland Australia
MoS 2 /Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations
作者Md. Ibrahim Ahmed; Sharnali Islam
作者单位1. Department of Electrical and Electronic Engineering University of Dhaka Dhaka Bangladesh; 2. Department of Electrical and Electronic Engineering National Institute of Textile Engineering and Research (NITER) Dhaka Bangladesh
Thermoelectric p‐Type Iron‐Based Ethylenetetrathiolate Coordination Polymers
作者Malar Auxilia Francis; Mari Heikkinen; Girish C. Tewari; Kristoffer Meinander; Johan Lindén; Maarit Karppinen
作者单位1. Department of Chemistry and Materials Science Aalto University Espoo Finland; 2. Department of Bioproducts and Biosystems Aalto University Espoo Finland; 3. Physics/Faculty of Science & Engineering Åbo Akademi Turku Finland
Two‐Dimensional Materials for Flexible Neuromorphic Devices: Materials, Engineering Strategies, Architectures, and Emerging Applications
作者Junzhe Tang; Letian Dai
作者单位1. Cuiying Honors College Lanzhou University Lanzhou Gansu People's Republic of China; 2. Center for Low‐Dimensional Quantum Materials Hubei University of Technology Wuhan Hubei People's Republic of China; 3. Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan Hubei People's Republic of China
Neuromorphic Deep‐Ultraviolet Signal Processing Using a‐Ga 2 O 3
作者Sidhant Sharma; Arthur Robert; Florian Wilke; Martin W. Allen; Valentina Baccetti; Jim G. Partridge; Hiep N. Tran
作者单位1. School of Engineering RMIT University Melbourne Victoria Australia; 2. Department of Physics RMIT University Melbourne Victoria Australia; 3. Department of Electrical and Computer Engineering University of Canterbury Christchurch New Zealand; 4. MacDiarmid Institute for Advanced Materials and Nanotechnology University of Canterbury Christchurch New Zealand
Intrinsic Ferromagnetism and Surface Oxidation in Nb 2 FeC: Revealed by Synchrotron‐Based X‐Ray Spectro‐ and Microscopy
作者Sambhu Charan Das; Kuan‐Hung Chen; Wei‐Xuan Lin; Hsiao‐Tsu Wang; Cheng‐En Lee; Ping‐Hung Yeh; Cheng‐En Zhang; Chao‐Hung Du; Jau‐Wern Chiou; Huang‐Ming Tsai; Kim Hsu; Chun‐Chieh Wang; Jigang Zhou; Jian Wang; Sekhar Chandra Ray; Deepak Vishnu S. K.; Chun‐Wei Chen; Way‐Faung Pong
作者单位1. Department of Physics Tamkang University New Taipei City Taiwan; 2. Department of Applied Physics National University of Kaohsiung Kaohsiung Taiwan; 3. National Synchrotron Radiation Research Center Hsinchu Taiwan; 4. Integrated Service Technology Incoperation Hsinchu Taiwan; 5. Battery Research and Development General Motors Warren Michigan USA; 6. Canadian Light Source University of Saskatchewan Saskatoon Saskatchewan Canada; 7. Department of Physics ITER Siksha ‘O’ Anusandhan Deemed to Be University Bhubaneswar Odisha India; 8. Department of Physics CSET University of South Africa Johannesburg South Africa; 9. Molecular Science and Technology Program Taiwan International Graduate Program (TIGP) Academia Sinica Taipei Taiwan; 10. Department of Chemistry National Tsing Hua University Hsinchu Taiwan; 11. Department of Materials Science and Engineering National Taiwan University Taipei Taiwan
Probing of Single‐Interface Dzyaloshinskii‐Moriya Interaction
作者Ji‐Sung Yu; Seong‐Hyub Lee; Minhwan Kim; Dae‐Yun Kim; Gunn‐Hee Han; Wooyoung Shim; Jiho Shin; Yohan Mok; Jaehun Cho; Duck‐Ho Kim; Sug‐Bong Choe
作者单位1. Department of Physics and Astronomy Seoul National University Seoul Republic of Korea; 2. Center For Spintronics Korea Institute of Science and Technology (KIST) Seoul Republic of Korea; 3. Department of Physics Ewha Womans University Seoul Republic of Korea; 4. Division of Nanotechnology Daegu‐Gyeongbuk Institute of Science and Technology (DGIST) Daegu Republic of Korea
Low Thermal Resistance Architectures for AlGaN‐Based Semiconductor Devices
作者Kidus Guye; Davide Orlandini; Seungheon Shin; Andy Allerman; Damena Agonafer; Siddharth Rajan; Samuel Graham
作者单位1. Department of Mechanical Engineering University of Maryland Maryland USA; 2. Department of Electrical and Computer Engineering The Ohio State University Columbus, Ohio USA; 3. Sandia National Laboratories Albuquerque New Mexico USA
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