物理与天体物理
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Shear-band-independent segregation-induced strain softening of single-crystal Ni-based superalloys
作者Haoyi Niu; Qingquan Lai; Hao Wu; Guohua Fan
作者单位1. Xi'an Rare Metal Materials Institute Co. Ltd 1 , Xi'an 710016,; 2. Suzhou National Laboratory 2 , Suzhou 215000,; 3. Key Laboratory for Light-weight Materials, Nanjing Tech University 3 , Nanjing 211816,
Spin-transfer torque driven motion of domain-wall skyrmions in a fixed channel: Controllable dynamics by in-plane current directions
作者Hongyan Zhang; Xue-Feng Zhang; Qi-Shuo Wang; Kangjie Tian; Kaiyou Luo; Xiao-Ping Ma; Hong-Guang Piao
作者单位1. Department of Physics, College of Science, Yanbian University 1 , Yanji 133002,; 2. Institute of Quantum Science and Technology, Yanbian University 2 , Yanji 133002,
Wafer-scale heteroepitaxy of Sn-alloyed ε -Ga2O3 on sapphire via low-pressure mist-CVD
作者Yan Wang; Zhigao Xie; Zhehan Ying; Jiahe Cao; Yibo Zhang; Guofeng Hu; Yu Bai; Shan Li; Weihua Tang; Zhiqiang Huang; Chee Keong Tan
作者单位1. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,; 2. Advanced Materials Thrust, Function Hub, The Hong Kong University of Science and Technology (Guangzhou) 2 , Guangzhou 511453, Guangdong,; 3. Materials Characterization and Preparation Facility (GZ), The Hong Kong University of Science and Technology (Guangzhou) 3 , Guangzhou 511453, Guangdong,; 4. Microelectronics Thrust, Function Hub, The Hong Kong University of Science and Technology (Guangzhou) 4 , Guangzhou 511453, Guangdong,; 5. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology 5 , Hong Kong,; 6. Guangzhou Municipal Key Laboratory of Materials Informatics, The Hong Kong University of Science and Technology (Guangzhou) 6 , Guangzhou 511453, Guangdong,; 7. Guangzhou Municipal Key Laboratory of Integrated Circuits Design, The Hong Kong University of Science and Technology (Guangzhou) 7 , Guangzhou 511453, Guangdong,
Compact Kerr comb based on fiber Fabry–Pérot microresonator with few-GHz repetition rate
作者Xinyi Chen; Han Yin; Zetong Li; Yuzhe Zhang; Tinghao Zhang; Siya Meng; Chenyang Shi; Yongwei Shi; Yingying Ji; Chenye Qin; Kunpeng Jia; Wei Liang; Zhenlin Wang; Shining Zhu; Zhenda Xie
作者单位1. National Laboratory of Solid State Microstructures, Kuang Yaming Honors School, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, School of Physics, Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University 1 , Nanjing 210023,; 2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123,
Stability and degradation of Si–GaN monolithic heterogeneous integration platform based on p-GaN gate GaN HEMTs
作者Yutong Fan; Weihang Zhang; Xin Feng; Yinhe Wu; Lili Gao; Zhihong Liu; Yue Hao; Jincheng Zhang
作者单位1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071,; 2. Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University 2 , Guangzhou 510555,; 3. Hangzhou Institute of Technology, Xidian University 3 , Hangzhou 311200,; 4. East China Institute of Photo-Electron ICs 4 , Bengbu 233042,
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