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JOURNAL OF ELECTRONIC MATERIALS

Springer 非OA 2026新锐 4区2025中科院 4区 已自动采集 最新完整样本 10 篇 平均 137 天

数据更新 2026-07-16 · 完整周期 10 篇 · 日期来源可逐条复核

JOURNAL OF ELECTRONIC MATERIALS已收录10篇完整论文周期样本,平均审稿137 天,中位审稿119 天。2025中科院4区,非OA,2025发文量943。页面含论文收到日期、录用日期、PDF、DOI和出版社网页溯源入口。

137平均天数
119中位天数
44最短天数
349最长天数
10最新论文
9432025发文量

Latest Papers

最新发表论文审稿周期

审稿天数=录用日期-收到日期;保留 PDF/DOI/网页源链接

44

Ultra-wideband FSS Absorber with Superior Performance Based on Printed Resistive Ink Architecture and Equivalent Circuit Modeling for EMI Mitigation

作者Shougaijam Chinglemba Singh; Kalyan Mondal; Lourembam Lolit Kumar Singh; Surajit Kundu

作者单位1. Department of Electronics and Communication Engineering, National Institute of Technology Manipur, Imphal, India; 2. Department of Electronics and Communication Engineering, National Institute of Technology Jamshedpur, Jamshedpur, India

PDF源文件 DOI 网页
54

Synthesis of SnS 2 Nanosheets for Gas Sensors: Effect of Hydrothermal Temperatures

作者To Thi Nguyet; Nguyen Pham Yen Nhi; Dang Thi Thu Ha; Pham Van Tong; Nguyen Viet Nhat; Pham Xuan Hien; Tran Nguyen Anh Quan; Chu Manh Hung; Nguyen Van Duy; Mingzhi Jiao; Chu Thi Xuan; Nguyen Duc Hoa

作者单位1. School of Materials Science and Engineering, Hanoi University of Science and Technology (HUST), Hanoi, Vietnam; 2. Department of Physics, Faculty of Mechanical Engineering, National University of Civil Engineering (NUCE), Hanoi, Vietnam; 3. Research Center for Internet of Things, State and Local Joint Engineering Laboratory of Perception Mine, China University of Mining and Technology, Xuzhou, China

PDF源文件 DOI 网页
126

Multilayered and Multifunctional Triboelectric Nanogenerator

作者Fatma Ozudogru; Sercan Koca; Seval Kinden; Shah Zayed Riam; Shawana Tabassum

作者单位1. Department of Electrical and Electronics Engineering, Eskisehir Technical University, Eskisehir, Turkey; 2. Department of Electrical Engineering, The University of Texas at Tyler, Tyler, USA

PDF源文件 DOI 网页
180

Statistical Work Function Variability of Metal Gate on Electrical Parameters for Nanosheet FET

作者Ritik Ranjan; Saurav Chanda; Rajesh Saha

作者单位1. Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, India

PDF源文件 DOI 网页
231

Influence of Indium Diffusion on Interface Quality of InGaAs/InAlAs Quantum Cascade Laser Structure

作者Xueyuan Bai; Shuo Liu; Baifang Liu; Qiuxia Feng; Wenyu Hu; Xiaoyi Wang; Yuechun Shi; Yang Qiu

作者单位1. Key Laboratory of Public Opinion Governance and Computational Communication, Sichuan Police College, Luzhou, China; 2. State Ethnic Affairs Commission, Southwest Minzu University, Chengdu, China; 3. Tibet Police Academy, Lhasa, China; 4. Zhengzhou Natural Gas Storage and Transportation Co., Ltd., ZhengZhou, China; 5. Core Research Facilities, Southern University of Science and Technology, Shenzhen, China; 6. Photon Technology Research Center Yongjiang Laboratory, Ningbo, China

PDF源文件 DOI 网页
66

Optical Properties and Annealing Effects of Ce 3+ -Doped Lu 3 Al 5 O 12 Single Crystal Grown by Micro-Pulling-Down Method with W Crucible

作者Kieu Anh Thi Doan; Takahiko Horiai; Masao Yoshino; Minh Hong Pham; Hanh Hong Mai; Akira Yoshikawa

作者单位1. Institute of Physics, Vietnam Academy of Science and Technology, Hanoi, Vietnam; 2. Graduate University of Sciences and Technology, Vietnam Academy of Science and Technology, Hanoi, Vietnam; 3. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan; 4. New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai, Miyagi, Japan; 5. Faculty of Electronics and Telecommunications, University of Engineering and Technology, Vietnam National University, Hanoi, Vietnam; 6. Institute for Materials Research, Tohoku University, Sendai, Miyagi, Japan

PDF源文件 DOI 网页
80

Multiple Resonant Mode-Based Ultra-Wideband Metasurface (9.42–24.75 GHz) Absorber for Low RCS and EMI Suppression

作者Gaurav Saxena; Alka Verma; Shipra Srivastava; Maksud Alam; Abhishek Ghoshal; Ashwani Singh; T. M. Yunus Khan; Ramakrishna Yadav; Yogendra Kumar Awasthi

作者单位1. Department of Electronics and Communication Engineering, Ajay Kumar Garg Engineering College, Ghaziabad, India; 2. Department of Electronics and Communication Engineering, Teerthanker Mahaveer University, Moradabad, India; 3. Department of Electronics and Communication Engineering, Krishna Institute of Engineering and Technology (KIET), Ghaziabad, Delhi-NCR, India; 4. Department of Electronics and Communication Engineering, Galgotias College of Engineering and Technology, Greater Noida, India; 5. Central Labs, King Khalid University, AlQura’a, Abha, Saudi Arabia; 6. Department of Electronics and Communication Engineering, GL Bajaj Institute of Technology and Management, Greater Noida, India; 7. Department of Electrical, Electronics and Communication Engineering, Galgotias University, Greater Noida, India

PDF源文件 DOI 网页
112

Local Structural Analysis in Weak Acidic Electrolytes for Zinc-Anode Battery by Anomalous X-ray Scattering and Neutron Scattering

作者Towa Eda; Hiroaki Watanabe; Yasuhiro Takabayashi; Koji Kimura; Junichi Inamoto; Akane Inoo; Koji Nakanishi; Yoshiaki Matsuo; So Fujinami; Takashi Honda; Kazuhiro Mori; Koichi Hayashi

作者单位1. Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya, Japan; 2. Department of Applied Chemistry, Graduate School of Engineering, University of Hyogo, Himeji, Japan; 3. Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Japan; 4. Office of Institutional Advancement and Communications, Kyoto University, Uji, Japan; 5. Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tokai, Japan; 6. SOKENDAI (The Graduate University for Advanced Studies), Tokai, Japan

PDF源文件 DOI 网页
128

Hall Effect and Magnetic Studies of Sol–Gel-Derived (Nd, Ce) Substituted SnO 2 Nanostructures

作者Tanisha; Naveen Kumar; Nupur Aggarwal

作者单位1. Department of Physics, Chandigarh University, Mohali, India; 2. Department of Physics, Galgotias University, Greater Noida, India

PDF源文件 DOI 网页
349

Role of Titanium Nanolayers in Tunable Phase Transition of Ge 1 Sb 9 Thin Film for Phase-Change Memory Application

作者Yu Li; Weihua Wu; Zhengquan Zhou; Li Li

作者单位1. School of Mathematics and Physics, Jiangsu University of Technology, Changzhou, China; 2. Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems, Jincheng, China; 3. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China; 4. Jincheng Research Institute of Opto-Mechatronics Industry, Jincheng, China

PDF源文件 DOI 网页