Paper Review Records
全部论文审稿周期
18 篇有效样本 · 按发表日期由新到旧排列
审稿天数=录用日期-收稿日期;保留 PDF/DOI/网页源链接
144
天
First-principles insights into predicted high hole mobility and reduced exciton binding energy in arsenene/Al2S3 van der Waals heterostructures
作者
Yuan Xue; Songbo Zhou; Hui-Zhen Zhou; Jian-Jun Yang; Hua-Dan Xia; Jiang-Shuai Zhu展开收起
作者单位
School of General Education, School of Mechanical and Electrical Engineering, Wuhan Business University, Wuhan, 430056, China; School of Automation, School of Mathematics and Statistics, Hubei University of Science and Technology, Xianning, 437100, China展开收起
77
天
Prediction of warpage and MP-stress in glass substrates based on multi-process-step correlation features and GRU-XGBoost model
作者
Jingyi Zhao; Meiying Su; Guoli Sun; Chuan Chen; Shanjun Ding; Rui Ma; Jun Li; Qidong Wang; Liqiang Cao展开收起
作者单位
Sate Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, China; Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China; University of Chinese Academy of Sciences, Beijing, 101408, China; State Key Laboratory of Precision Welding & Joining of Materials and Structures, Harbin Institute of Technology, Harbin, 150001, China展开收起
133
天
Enhanced electrocatalytic activity of fluorine and nitrogen-doped graphene oxide as counter electrodes in DSSCs
作者
Ebrahim Shokraee; Mohammad Akbarzadeh Pasha; Fatemeh Mohammadpour展开收起
作者单位
Department of Solid State Physics, Faculty of Sciences, University of Mazandaran, Babolsar, 47416-95447, Iran; Department of Physics Education, Farhangian University, P.O. Box 14665-889, Tehran, Iran展开收起
54
天
Post-growth surface engineering of AlGaN via Mn thermal diffusion for contact applications
作者
K. Nowak; M. Grodzicki; D. Majchrzak; W. Olszewski; R. Kuna; D. Hommel; D. Pucicki; E. Piskorska-Hommel展开收起
作者单位
Łukasiewicz Research Network-PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław, Poland; Wrocław University of Science and Technology, Department of Nanometrology, Janiszewskiego 11/17, Wrocław, Poland; Wrocław University of Science and Technology, Department of Semiconductor Materials Engineering, Wyb. Wyspiańskiego 27, Wrocław, Poland; Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, Wrocław, Poland展开收起
41
天
Low-resistance Ti-based ohmic contacts on p-GaAsSb
作者
Ali Ahmad; Nicolas Coudurier; Patrice Gergaud; Félix Ravry; Antoine Lombrez; Alexis Divay; Thierry Baron; Nicolas Gauthier; Romain Thibon; Luomon-Blandine Coulibaly; Nicolas Bernier; Hervé Boutry展开收起
作者单位
Univ. Grenoble Alpes, CEA-LETI, 17 Av. des Martyrs, Grenoble, 38000, France; Univ. Grenoble Alpes CNRS, LTM, Grenoble, 38000, France展开收起
47
天
Luminescence evolution across the β↔γ polymorphic transition in Ga2O3
作者
Fatima Matar; Alexander Azarov; Ying-Li Shi; Amar K. Salih; Curtis Irvine; Mika T. Westerhausen; Francis Chi-Chung Ling; Matthew R. Phillips; Andrej Kuznetsov; Cuong Ton-That展开收起
作者单位
School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia; Department of Physics and Centre for Materials Science and Nanotechnology, University of Oslo, Blindern, Oslo, N-0316, Norway; Department of Physics, The University of Hong Kong, Pokfulam, 999077, Hong Kong, China展开收起
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