Paper Review Records
全部论文审稿周期
13 篇有效样本 · 按发表日期由新到旧排列
审稿天数=录用日期-收稿日期;保留 PDF/DOI/网页源链接
Post-growth surface engineering of AlGaN via Mn thermal diffusion for contact applications
作者K. Nowak; M. Grodzicki; D. Majchrzak; W. Olszewski; R. Kuna; D. Hommel; D. Pucicki; E. Piskorska-Hommel
作者单位Łukasiewicz Research Network-PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław, Poland; Wrocław University of Science and Technology, Department of Nanometrology, Janiszewskiego 11/17, Wrocław, Poland; Wrocław University of Science and Technology, Department of Semiconductor Materials Engineering, Wyb. Wyspiańskiego 27, Wrocław, Poland; Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, Wrocław, Poland
Low-resistance Ti-based ohmic contacts on p-GaAsSb
作者Ali Ahmad; Nicolas Coudurier; Patrice Gergaud; Félix Ravry; Antoine Lombrez; Alexis Divay; Thierry Baron; Nicolas Gauthier; Romain Thibon; Luomon-Blandine Coulibaly; Nicolas Bernier; Hervé Boutry
作者单位Univ. Grenoble Alpes, CEA-LETI, 17 Av. des Martyrs, Grenoble, 38000, France; Univ. Grenoble Alpes CNRS, LTM, Grenoble, 38000, France
Luminescence evolution across the β↔γ polymorphic transition in Ga2O3
作者Fatima Matar; Alexander Azarov; Ying-Li Shi; Amar K. Salih; Curtis Irvine; Mika T. Westerhausen; Francis Chi-Chung Ling; Matthew R. Phillips; Andrej Kuznetsov; Cuong Ton-That
作者单位School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia; Department of Physics and Centre for Materials Science and Nanotechnology, University of Oslo, Blindern, Oslo, N-0316, Norway; Department of Physics, The University of Hong Kong, Pokfulam, 999077, Hong Kong, China
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