CrushSCI.com
131.9Average days
118Median days
41Fastest days
349Longest days
9432025 publications

Paper Review Records

All Paper Review Records

25 valid samples · Newest publication first
Review days = acceptance date − received date. PDF, DOI, and publisher-page sources are retained.

180 days

Statistical Work Function Variability of Metal Gate on Electrical Parameters for Nanosheet FET

Authors
Ritik Ranjan; Saurav Chanda; Rajesh SahaShow moreShow less
Affiliations
1. Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, IndiaShow moreShow less
Source PDF DOI Publisher page
231 days

Influence of Indium Diffusion on Interface Quality of InGaAs/InAlAs Quantum Cascade Laser Structure

Authors
Xueyuan Bai; Shuo Liu; Baifang Liu; Qiuxia Feng; Wenyu Hu; Xiaoyi Wang; Yuechun Shi; Yang QiuShow moreShow less
Affiliations
1. Key Laboratory of Public Opinion Governance and Computational Communication, Sichuan Police College, Luzhou, China; 2. State Ethnic Affairs Commission, Southwest Minzu University, Chengdu, China; 3. Tibet Police Academy, Lhasa, China; 4. Zhengzhou Natural Gas Storage and Transportation Co., Ltd., ZhengZhou, China; 5. Core Research Facilities, Southern University of Science and Technology, Shenzhen, China; 6. Photon Technology Research Center Yongjiang Laboratory, Ningbo, ChinaShow moreShow less
Source PDF DOI Publisher page
66 days

Optical Properties and Annealing Effects of Ce 3+ -Doped Lu 3 Al 5 O 12 Single Crystal Grown by Micro-Pulling-Down Method with W Crucible

Authors
Kieu Anh Thi Doan; Takahiko Horiai; Masao Yoshino; Minh Hong Pham; Hanh Hong Mai; Akira YoshikawaShow moreShow less
Affiliations
1. Institute of Physics, Vietnam Academy of Science and Technology, Hanoi, Vietnam; 2. Graduate University of Sciences and Technology, Vietnam Academy of Science and Technology, Hanoi, Vietnam; 3. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan; 4. New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai, Miyagi, Japan; 5. Faculty of Electronics and Telecommunications, University of Engineering and Technology, Vietnam National University, Hanoi, Vietnam; 6. Institute for Materials Research, Tohoku University, Sendai, Miyagi, JapanShow moreShow less
Source PDF DOI Publisher page
80 days

Multiple Resonant Mode-Based Ultra-Wideband Metasurface (9.42–24.75 GHz) Absorber for Low RCS and EMI Suppression

Authors
Gaurav Saxena; Alka Verma; Shipra Srivastava; Maksud Alam; Abhishek Ghoshal; Ashwani Singh; T. M. Yunus Khan; Ramakrishna Yadav; Yogendra Kumar AwasthiShow moreShow less
Affiliations
1. Department of Electronics and Communication Engineering, Ajay Kumar Garg Engineering College, Ghaziabad, India; 2. Department of Electronics and Communication Engineering, Teerthanker Mahaveer University, Moradabad, India; 3. Department of Electronics and Communication Engineering, Krishna Institute of Engineering and Technology (KIET), Ghaziabad, Delhi-NCR, India; 4. Department of Electronics and Communication Engineering, Galgotias College of Engineering and Technology, Greater Noida, India; 5. Central Labs, King Khalid University, AlQura’a, Abha, Saudi Arabia; 6. Department of Electronics and Communication Engineering, GL Bajaj Institute of Technology and Management, Greater Noida, India; 7. Department of Electrical, Electronics and Communication Engineering, Galgotias University, Greater Noida, IndiaShow moreShow less
Source PDF DOI Publisher page
112 days

Local Structural Analysis in Weak Acidic Electrolytes for Zinc-Anode Battery by Anomalous X-ray Scattering and Neutron Scattering

Authors
Towa Eda; Hiroaki Watanabe; Yasuhiro Takabayashi; Koji Kimura; Junichi Inamoto; Akane Inoo; Koji Nakanishi; Yoshiaki Matsuo; So Fujinami; Takashi Honda; Kazuhiro Mori; Koichi HayashiShow moreShow less
Affiliations
1. Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya, Japan; 2. Department of Applied Chemistry, Graduate School of Engineering, University of Hyogo, Himeji, Japan; 3. Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Japan; 4. Office of Institutional Advancement and Communications, Kyoto University, Uji, Japan; 5. Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tokai, Japan; 6. SOKENDAI (The Graduate University for Advanced Studies), Tokai, JapanShow moreShow less
Source PDF DOI Publisher page
128 days

Hall Effect and Magnetic Studies of Sol–Gel-Derived (Nd, Ce) Substituted SnO 2 Nanostructures

Authors
Tanisha; Naveen Kumar; Nupur AggarwalShow moreShow less
Affiliations
1. Department of Physics, Chandigarh University, Mohali, India; 2. Department of Physics, Galgotias University, Greater Noida, IndiaShow moreShow less
Source PDF DOI Publisher page

Expert Matching · Case Demo

Turn Your Submission Goalsinto a Verifiable Journal Plan

Share your field, deadline, and author profile. CrushSCI uses real review records to suggest a title direction, shortlist journals, and estimate timelines.

We will reply within 30 minutes.

CrushSCI online

Client

I work in environmental engineering and need an SCI paper published within three months. I have no grant funding or prominent co-author. Which journals could I target?

CrushSCI

Yes. We will first screen for feasibility against the 90-day deadline, then identify comparable papers without grant support or prominent co-authors. The final shortlist will prioritize research quality and journal scope.

Suggested title
Machine Learning and Life-Cycle Assessment for Predicting and Optimizing Carbon Emissions in Urban Wastewater Treatment

SampleLatest 5 valid paper samples from 2026

Average review62 days

Median65 days

Contact CrushSCI

Contact CrushSCI

Leave your email address to discuss academic polishing, structural refinement, or one-to-one guidance.

We will reply within 30 minutes.

Selected service: Academic Consulting Service

Leave your email address

Or email us directly at [email protected]

Enter your email address so we can reply. Your details will remain private.