Materials Science
Paper Review Records
All Paper Review Records
20 valid samples · Newest publication first
Review days = acceptance date − received date. PDF, DOI, and publisher-page sources are retained.
Ultra-wideband FSS Absorber with Superior Performance Based on Printed Resistive Ink Architecture and Equivalent Circuit Modeling for EMI Mitigation
AuthorsShougaijam Chinglemba Singh; Kalyan Mondal; Lourembam Lolit Kumar Singh; Surajit Kundu
Affiliations1. Department of Electronics and Communication Engineering, National Institute of Technology Manipur, Imphal, India; 2. Department of Electronics and Communication Engineering, National Institute of Technology Jamshedpur, Jamshedpur, India
Synthesis of SnS 2 Nanosheets for Gas Sensors: Effect of Hydrothermal Temperatures
AuthorsTo Thi Nguyet; Nguyen Pham Yen Nhi; Dang Thi Thu Ha; Pham Van Tong; Nguyen Viet Nhat; Pham Xuan Hien; Tran Nguyen Anh Quan; Chu Manh Hung; Nguyen Van Duy; Mingzhi Jiao; Chu Thi Xuan; Nguyen Duc Hoa
Affiliations1. School of Materials Science and Engineering, Hanoi University of Science and Technology (HUST), Hanoi, Vietnam; 2. Department of Physics, Faculty of Mechanical Engineering, National University of Civil Engineering (NUCE), Hanoi, Vietnam; 3. Research Center for Internet of Things, State and Local Joint Engineering Laboratory of Perception Mine, China University of Mining and Technology, Xuzhou, China
Multilayered and Multifunctional Triboelectric Nanogenerator
AuthorsFatma Ozudogru; Sercan Koca; Seval Kinden; Shah Zayed Riam; Shawana Tabassum
Affiliations1. Department of Electrical and Electronics Engineering, Eskisehir Technical University, Eskisehir, Turkey; 2. Department of Electrical Engineering, The University of Texas at Tyler, Tyler, USA
Statistical Work Function Variability of Metal Gate on Electrical Parameters for Nanosheet FET
AuthorsRitik Ranjan; Saurav Chanda; Rajesh Saha
Affiliations1. Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, India
Influence of Indium Diffusion on Interface Quality of InGaAs/InAlAs Quantum Cascade Laser Structure
AuthorsXueyuan Bai; Shuo Liu; Baifang Liu; Qiuxia Feng; Wenyu Hu; Xiaoyi Wang; Yuechun Shi; Yang Qiu
Affiliations1. Key Laboratory of Public Opinion Governance and Computational Communication, Sichuan Police College, Luzhou, China; 2. State Ethnic Affairs Commission, Southwest Minzu University, Chengdu, China; 3. Tibet Police Academy, Lhasa, China; 4. Zhengzhou Natural Gas Storage and Transportation Co., Ltd., ZhengZhou, China; 5. Core Research Facilities, Southern University of Science and Technology, Shenzhen, China; 6. Photon Technology Research Center Yongjiang Laboratory, Ningbo, China
Optical Properties and Annealing Effects of Ce 3+ -Doped Lu 3 Al 5 O 12 Single Crystal Grown by Micro-Pulling-Down Method with W Crucible
AuthorsKieu Anh Thi Doan; Takahiko Horiai; Masao Yoshino; Minh Hong Pham; Hanh Hong Mai; Akira Yoshikawa
Affiliations1. Institute of Physics, Vietnam Academy of Science and Technology, Hanoi, Vietnam; 2. Graduate University of Sciences and Technology, Vietnam Academy of Science and Technology, Hanoi, Vietnam; 3. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan; 4. New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai, Miyagi, Japan; 5. Faculty of Electronics and Telecommunications, University of Engineering and Technology, Vietnam National University, Hanoi, Vietnam; 6. Institute for Materials Research, Tohoku University, Sendai, Miyagi, Japan
Multiple Resonant Mode-Based Ultra-Wideband Metasurface (9.42–24.75 GHz) Absorber for Low RCS and EMI Suppression
AuthorsGaurav Saxena; Alka Verma; Shipra Srivastava; Maksud Alam; Abhishek Ghoshal; Ashwani Singh; T. M. Yunus Khan; Ramakrishna Yadav; Yogendra Kumar Awasthi
Affiliations1. Department of Electronics and Communication Engineering, Ajay Kumar Garg Engineering College, Ghaziabad, India; 2. Department of Electronics and Communication Engineering, Teerthanker Mahaveer University, Moradabad, India; 3. Department of Electronics and Communication Engineering, Krishna Institute of Engineering and Technology (KIET), Ghaziabad, Delhi-NCR, India; 4. Department of Electronics and Communication Engineering, Galgotias College of Engineering and Technology, Greater Noida, India; 5. Central Labs, King Khalid University, AlQura’a, Abha, Saudi Arabia; 6. Department of Electronics and Communication Engineering, GL Bajaj Institute of Technology and Management, Greater Noida, India; 7. Department of Electrical, Electronics and Communication Engineering, Galgotias University, Greater Noida, India
Local Structural Analysis in Weak Acidic Electrolytes for Zinc-Anode Battery by Anomalous X-ray Scattering and Neutron Scattering
AuthorsTowa Eda; Hiroaki Watanabe; Yasuhiro Takabayashi; Koji Kimura; Junichi Inamoto; Akane Inoo; Koji Nakanishi; Yoshiaki Matsuo; So Fujinami; Takashi Honda; Kazuhiro Mori; Koichi Hayashi
Affiliations1. Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya, Japan; 2. Department of Applied Chemistry, Graduate School of Engineering, University of Hyogo, Himeji, Japan; 3. Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Japan; 4. Office of Institutional Advancement and Communications, Kyoto University, Uji, Japan; 5. Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tokai, Japan; 6. SOKENDAI (The Graduate University for Advanced Studies), Tokai, Japan
Hall Effect and Magnetic Studies of Sol–Gel-Derived (Nd, Ce) Substituted SnO 2 Nanostructures
AuthorsTanisha; Naveen Kumar; Nupur Aggarwal
Affiliations1. Department of Physics, Chandigarh University, Mohali, India; 2. Department of Physics, Galgotias University, Greater Noida, India
Role of Titanium Nanolayers in Tunable Phase Transition of Ge 1 Sb 9 Thin Film for Phase-Change Memory Application
AuthorsYu Li; Weihua Wu; Zhengquan Zhou; Li Li
Affiliations1. School of Mathematics and Physics, Jiangsu University of Technology, Changzhou, China; 2. Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems, Jincheng, China; 3. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China; 4. Jincheng Research Institute of Opto-Mechatronics Industry, Jincheng, China
Expert Matching · Case Demo
Turn Your Submission Goalsinto a Verifiable Journal Plan
Share your field, deadline, and author profile. CrushSCI uses real review records to suggest a title direction, shortlist journals, and estimate timelines.