物理与天体物理
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Effect of thermal load on lasing characteristics of InGaN/GaN single- and Double-QW laser diode
作者Redouane Sersar; Redouane En-Nadir; Ilyass Ez-zejjari; Walid Belaid; Hassan Abboudi; Ahmed Sali; Haddou El Ghazi
作者单位Smart Control, Diagnostic and Renewable Energy Group, Laboratory of Complex Cyber Physical Systems, Higher National School of Arts and Crafts (ENSAM), Hassan II University, 150 the Nil Street, Casablanca, 20670, Morocco; Interdisciplinary Institute for Technological Innovation, Sherbrooke University, 2500 Bd University, Sherbrooke, QC, J1N 3C6, Canada; Pollard Institute, School of Electronic and Electrical Engineering, University of Leeds, Leeds, LS2 9JT, UK; Laser Spectroscopy Group, Faculty of Sciences, Selcuk University, Konya, 42075, Turkey; Laboratory of Solid-State Physics, Faculty of Sciences, Sidi Mohamed Ben Abdallah University, Fez, 30000, Morocco
Engineering phonon anharmonicity and electronic band convergence in Mg3XY (X = Si, Ge; Y = S, Se, Te) monolayers for high thermoelectric performance
作者Zhonghao Zheng; Haiyu Wang; Zhuoshi Liu; Kai Zheng; Heping Cui; Xianping Chen; Jiabing Yu
作者单位College of Optoelectronic Engineering and Key Laboratory of Optoelectronic Technology & Systems Education Ministry of China, Chongqing University, Chongqing, 400044, China; Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guangxi Key Laboratory of Manufacturing Systems and Advanced Manufacturing Technology, Guilin, 541004, China; School of Electrical Engineering and State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing, 400044, China; Space Science and Technology Research Institute, Chongqing University, Chongqing, 400044, China; Institute of Materials in Electrical Engineering 1, RWTH Aachen University, Sommerfeldstr. 24, Aachen, 52074, Germany
Negative differential resistance in single molecular transistor: The role of Coulomb interaction and non-linear electron-phonon coupling
作者B. Navashreya; Narasimha Raju Chebrolu; Aalu Boda; Soma Mukhopadhyay; Ashok Chatterjee
作者单位Department of Physics, Central University of Karnataka, Kalaburagi, Karnataka, 585367, India; Department of Physics, National Institute of Technology, Warangal, Telangana, 506004, India; Department of H & S, CVR College of Engineering, Ibrahimpatnam, Rangareddy, Telangana, 501510, India; Department of Physics, Anurag University, Hyderabad, 500088, India
Reversible structural phase transition and multifunctional switching in GaOY (Y= Cl, Br) monolayers
作者Yuejiao Wang; Yuxin Yang; Yanfeng Ge; Yong Liu; Busheng Wang; Wenhui Wan
作者单位State Key Laboratory of Metastable Materials Science and Technology & Hebei Key Laboratory of Microstructural Material Physics, School of Science, Yanshan University, Qinhuangdao, 066004, People’s Republic of China
Water permeation through a nanogap between two disjoint carbon nanotubes: A comparison between charged and uncharged channels
作者Qian Wang; Zi Wang; Tao Zhang; Keda Yang; Jiaye Su
作者单位MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, 210094, China; Key Laboratory of Artificial Organs and Computational Medicine in Zhejiang Province, Shulan International Medical College, Zhejiang Shuren University, Hangzhou, 310015, China
Strain-induced quantum anomalous valley Hall phase in monolayer FeCl2: An explicit Chern number criterion and crystal-field mechanism
作者Jing Wang; Wenli Zhang; Shiru Yang; Peixuan Liu; Bin Shao; Xu Zuo
作者单位College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China; Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Nankai University, Tianjin, 300350, China; Shenzhen Research Institute of Nankai University, Shenzhen, 518057, China; Tianjin Key Laboratory of Efficient Solar Energy Utilization, Nankai University, Tianjin, 300350, China; Engineering Research Center of Ministry of Education for Thin Film Optoelectronics Technology, Nankai University, Tianjin, 300350, China
Tuning the electronic structure of graphene by controlling spatial confinement
作者Mohammadamir Bazrafshan; Thomas D. Kühne
作者单位Center for Advanced Systems Understanding (CASUS), Conrad-Schiedt-Straße 20, 02826 Görlitz, Germany; Helmholtz Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany; Institute of Artificial Intelligence, Technische Universität Dresden, Helmholtzstraße 10, 01069 Dresden, Germany
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