Review Cycle Records
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
数据更新 2026-07-16 · 完整周期 10 篇 · 日期来源可逐条复核
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS已收录10篇完整论文周期样本,平均审稿138.2 天,中位审稿141 天。2025中科院4区,非OA,2025发文量136。页面含论文收到日期、录用日期、PDF、DOI和出版社网页溯源入口。
Latest Papers
最新发表论文审稿周期
审稿天数=录用日期-收到日期;保留 PDF/DOI/网页源链接
Design and Implications of Oxide Stack Engineering in Junctionless Double Gate Devices
作者Sachindra Bharti; Rohit Dhiman; Gargi Khanna
作者单位1. Department of Electronics and Communication Engineering Indian Institute of Information Technology Bhagalpur Bhagalpur Bihar India; 2. Electronics and Communication Engineering Department National Institute of Technology Hamirpur Hamirpur Himachal Pradesh India
Performance Enhancement of Dielectric Pocket Vertical TFET for Energy Efficient High Frequency Applications
作者Prasenjit Mahato; Abhishek Raj; Sukanta Kumar Swain; Kavindra Kumar Kavi; Rajiv Kumar; Shashi Kant Sharma
作者单位1. Department of Electronics and Communication Engineering Indian Institute of Information Technology Ranchi Ranchi Jharkhand India; 2. Department of Electronics and Communication Engineering Vidya Memorial Institute of Technology Ranchi India; 3. Department of Electronics and Communication Engineering Amrita School of Engineering, Amrita Vishwa Vidyapeetham Coimbatore India; 4. Centre of Excellence for Nanotechnology, Department of Electronics and Communication Engineering Koneru Lakshmaiah Education Foundation Vaddeswaram Andhra Pradesh India; 5. Department of Electronics and Communication Engineering National Institute of Technology Patna Bihar India
Self‐Biased Diode‐Connected Current Source Based Class‐ AB Flipped Source Follower Low Pass Filter for Biomedical Applications
作者Diksha Thakur; Kulbhushan Sharma
作者单位1. Department of Electronics and Communication Engineering Chandigarh University Mohali India; 2. Department of Electronics and Communication Engineering Amrita School of Engineering, Amrita Vishwa Vidyapeetham Haridwar India
Simulation Modeling of Ferroelectric‐Gated InSe 2D ‐ HEMT With Enhanced Electrostatic Control and 2DEG Engineering Towards Biosensor Applications
作者E. Raghuveera; Padmakshya Kar; Nitish Kumar; Trupti Ranjan Lenka; Sudhanshu Choudhary; Hieu Pham Trung Nguyen
作者单位1. Department of Electronics and Communication Engineering National Institute of Technology Silchar Cachar Assam India; 2. School of Electrical Engineering and Computer Science University of North Dakota Grand Forks North Dakota USA; 3. Department of Electrical and Computer Engineering Texas Tech University Lubbock Texas USA
Spoof Surface Plasmon Polariton Enables Ultrawideband THz Absorption Enhancement of Multilayer Graphene Excited by a Double Circular Metal Ring Array
作者H. E. Guo‐Qiang; Tingyue Sun; Zhen‐Yu Ding; Siqi Xu; Cheng Chen; Cathleen De Tandt; Muhammad Muneeb; Dries Van Thourhout; Bart Kuyken; Johan Stiens
作者单位1. Key Laboratory of Specialty Fiber Optics and Optical Access Networks, Joint International Research Laboratory of Specialty Fiber Optics and Advanced Communication Shanghai University Shanghai People's Republic of China; 2. School of Communication and Information Engineering Shanghai University Shanghai People's Republic of China; 3. Department of Electronics and Informatics ETRO‐IR of the Faculty of Engineering Vrije Universiteit Brussel (VUB) Brussels Belgium; 4. School of Information Science and Technology Northwest University Xi'an People's Republic of China; 5. Photonics Research Group Ghent University Gent Belgium; 6. Center for Nano and Biophotonics (NB‐Photonics) Ghent University‐IMEC Ghent Belgium; 7. SSET Department IMEC Leuven Belgium
A 209 Nanowatt 0.5 Volt Electronically Tunable Memristor Emulator Based on Bulk‐Driven Operational Transconductance Amplifiers
作者Fatih Saydam; Fırat Kaçar
作者单位1. Department of Electrical and Electronics Engineering Trakya University Edirne Türkiye; 2. Department of Electrical and Electronics Engineering Istanbul University‐Cerrahpaşa İstanbul Türkiye
GMR ‐Based Eddy‐Current Sensing and Embedded TinyML for Advanced Crack‐Shape Characterization
作者Dalal Radia Touil; Ahmed Chouki Lahrech; Bachir Helifa; Ibn Khaldoun Lefkaier
作者单位1. Materials Physics Laboratory, Amar Telidji University of Laghouat Laghouat Algeria; 2. Ziane Achour University of Djelfa Djelfa Algeria
Design of 8‐Bit Dadda Multiplier and Divider Using Logic Level Pruning Approximate Arithmetic Circuits
作者Kattekola Naresh; Shubhankar Majumdar; Y. Padma Sai
作者单位1. Department of Electronics and Communication Engineering NIT Meghalaya Shillong Meghalaya India; 2. Department of Electronics and Communication Engineering VNR VJIET Hyderabad Telangana India
Analytical Modeling and Extraction of Small Signal Model Parameters of Cylindrical Gate Stack ( HfO 2 ) Silicon‐On‐Insulator Schottky Barrier MOSFET for High Frequency Circuits
作者Nitish Uppal; Amit Saxena; Vandana Nath; Radhey Shyam Gupta
作者单位1. University School of Information and Communication Technology Guru Gobind Singh Indraprastha University New Delhi India; 2. Department of Electronics and Communication Engineering Maharaja Agrasen Institute of Technology New Delhi India